Characteristics STPS1H100
2/10
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.54 x I
F(AV)
+ 0.08 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 100 V
I
F(RMS)
RMS forward voltage 10 A
I
F(AV)
Average forward current T
L
= 160 °C δ = 0.5 1 A
I
FSM
Surge non repetitive forward current t
p
=10 ms sinusoidal 50 A
I
RRM
Repetitive peak reverse current t
p
= 2 µs F = 1 kHz square 1 A
I
RSM
Non repetitive peak reverse current t
p
= 100 µs square 1 A
P
ARM
Repetitive peak avalanche power t
p
= 1 µs T
j
= 25 °C 1500 W
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature
(1)
1. condition to avoid thermal runaway for a diode on its own heatsink
175 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-l)
Junction to lead
SMA 30
°C/WSMB 25
SMAflat 25
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
1. Pulse test: tp = 5 ms, δ < 2%
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
4µA
T
j
= 125 °C 0.2 0.5 mA
V
F
(2)
2. Pulse test: tp = 380 µs, δ < 2%
Forward voltage drop
T
j
= 25 °C
I
F
= 1 A
0.77
V
T
j
= 125 °C 0.58 0.62
T
j
= 25 °C
I
F
= 2 A
0.86
T
j
= 125 °C 0.65 0.7
dPtot
dTj
---------------
1
Rth j a–()
--------------------------
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