IXTP140P05T Datasheet IXTP140P05T, IXTH140P05T, IXTA140P05T | P1-P3

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C - 50 V

V

DGR

T

J

= 25°C to 150°C, R

GS

= 1MΩ - 50 V

V

GSS

Continuous ±15 V

V

GSM

Transient ±25 V

I

D25

T

C

= 25°C (Chip Capability) -140 A

I

LRMS

Lead Current Limit, RMS -120 A

I

DM

T

C

= 25°C, Pulse Width Limited by T

JM

- 420 A

I

A

T

C

= 25°C - 70 A

E

AS

T

C

= 25°C1J

P

D

T

C

= 25°C 298 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6mm (0.062 in.) from Case for 10s 300 °C

T

SOLD

Plastic Body for 10s 260 °C

M

d

Mounting Torque (TO-220 & TO-247) 1.13/10 Nm/lb.in.

Weight TO-263 2.5 g

TO-220 3.0 g

TO-247 6.0 g

DS100027C(01/13)

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= - 250μA - 50 V

V

GS(th)

V

DS

= V

GS

, I

D

= - 250μA - 2.0 - 4.0 V

I

GSS

V

GS

= ± 15V, V

DS

= 0V ±100 nA

I

DSS

V

DS

= V

DSS,

V

GS

= 0V -10 μA

T

J

= 125°C - 750 μA

R

DS(on)

V

GS

= -10V, I

D

= 0.5 • I

D25

, Note 1 9 mΩ

TrenchP

TM

Power MOSFETs

P-Channel Enhancement Mode

Avalanche Rated

IXTA140P05T

IXTP140P05T

IXTH140P05T

V

DSS

= - 50V

I

D25

= - 140A

R

DS(on)

≤≤

≤ 9m

ΩΩ

Ω

Features

z

International Standard Packages

z

Avalanche Rated

z

Extended FBSOA

z

Fast Intrinsic Diode

z

Low R

DS(ON)

and Q

G

Advantages

z

Easy to Mount

z

Space Savings

z

High Power Density

Applications

z

High-Side Switching

z

Push Pull Amplifiers

z

DC Choppers

z

Automatic Test Equipment

z

Current Regulators

z

Battery Charger Applications

G = Gate D = Drain

S = Source Tab = Drain

TO-247 (IXTH)

G

S

D

D (Tab)

TO-263 AA (IXTA)

G

S

D (Tab)

G

D

S

TO-220AB (IXTP)

D (Tab)

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTA140P05T IXTP140P05T

IXTH140P05T

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

g

fs

V

DS

= -10V, I

D

= 0.5 • I

D25

, Note 1 44 72 S

C

iss

13.5 nF

C

oss

V

GS

= 0V, V

DS

= - 25V, f = 1MHz 1640 pF

C

rss

640 pF

t

d(on)

28 ns

t

r

34 ns

t

d(off)

38 ns

t

f

25 ns

Q

g(on)

200 nC

Q

gs

V

GS

= -10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

50 nC

Q

gd

65 nC

R

thJC

0.42 °C/W

R

thCS

TO-220 0.50 °C/W

TO-247 0.21 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

I

S

V

GS

= 0V -140 A

I

SM

Repetitive, Pulse Width Limited by T

JM

- 560 A

V

SD

I

F

= - 70A, V

GS

= 0V, Note 1 -1.3 V

t

rr

53 ns

Q

RM

58 nC

I

RM

- 2.2 A

Resistive Switching Times

V

GS

= -10V, V

DS

= - 30V, I

D

= - 50A

R

G

= 1Ω (External)

I

F

= - 70A, -di/dt = -100A/μs

V

R

= - 25V, V

GS

= 0V

TO-247 Outline

Pins: 1 - Gate 2 - Drain

3 - Source

TO-220 Outline

1 = Gate

2 = Drain

3 = Source

TO-263 Outline

Pins:

1 - Gate

2,4 - Drain

3 - Source

IXTA140P05T IXTP140P05T

IXTH140P05T

Fig. 1. Output Characteristics @ T

J

= 25ºC

-140

-120

-100

-80

-60

-40

-20

0

-1.2-1-0.8-0.6-0.4-0.20

V

DS

- Volts

I

D

- Amperes

V

GS

= -10V

- 9V

- 8V

- 5

V

- 6

V

- 7

V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

-350

-300

-250

-200

-150

-100

-50

0

-16-14-12-10-8-6-4-20

V

DS

- Volts

I

D

- Amperes

V

GS

= -10V

- 5

V

- 6

V

- 7

V

- 8

V

- 9

V

Fig. 3. Output Characteristics @ T

J

= 125ºC

-140

-120

-100

-80

-60

-40

-20

0

-1.6-1.4-1.2-1-0.8-0.6-0.4-0.20

V

DS

- Volts

I

D

- Amperes

V

GS

= -10V

- 9V

- 8V

- 7V

- 5V

- 6V

Fig. 4. R

DS(on)

Normalized to I

D

= - 70A Value vs.

Junction Temperature

0.6

0.8

1.0

1.2

1.4

1.6

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= -10V

I

D

= - 140A

I

D

= - 70A

Fig. 5. R

DS(on)

Normalized to I

D

= - 70A Value vs.

Drain Current

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

-350-300-250-200-150-100-500

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= -10V

T

J

= 25ºC

T

J

= 125ºC

Fig. 6. Maximum Drain Current vs.

Case Temperature

-140

-120

-100

-80

-60

-40

-20

0

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

External Lead Current Limit

IXTP140P05T

IXTP140P05T

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