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IXTP140P05T

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA140P05T IXTP140P05T
IXTH140P05T
Fig. 7. Input Admittance
-180
-160
-140
-120
-100
-80
-60
-40
-20
0
-6.5-6.0-5.5-5.0-4.5-4.0-3.5-3.0-2.5
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
20
40
60
80
100
-180-160-140-120-100-80-60-40-200
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-300
-250
-200
-150
-100
-50
0
-1.5-1.4-1.3-1.2-1.1-1.0-0.9-0.8-0.7-0.6-0.5-0.4
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0 20406080100120140160180200
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= - 25V
I
D
= - 70A
I
G
= -1mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
-40-35-30-25-20-15-10-50
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MH
z
C
iss
C
rss
C
oss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
1,000
110100
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
R
DS(on)
Limit
10ms
DC
-
-
-
-
--
-
100ms
External Lead
Current Limit
© 2013 IXYS CORPORATION, All Rights Reserved
IXTA140P05T IXTP140P05T
IXTH140P05T
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
22
24
26
28
30
32
34
36
38
-50-48-46-44-42-40-38-36-34-32-30-28-26-24
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 1Ω, V
GS
= -10V
V
DS
= - 30V
T
J
= 25ºC
T
J
= 125ºC
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
0
40
80
120
160
200
240
02468101214161820
R
G
- Ohms
t
r
- Nanoseconds
20
30
40
50
60
70
80
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= -10V
V
DS
= - 30V
I
D
= - 50A, - 25A
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
22
23
24
25
26
27
28
29
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
35
40
45
50
55
60
65
70
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1Ω, V
GS
= -10V
V
DS
= - 30V
I
D
= - 25A, - 50A
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
30
35
40
45
50
55
60
65
70
-50-48-46-44-42-40-38-36-34-32-30-28-26-24
I
D
- Amperes
t
f
- Nanoseconds
22
23
24
25
26
27
28
29
30
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1Ω, V
GS
= -10V
V
DS
= - 30V
T
J
= 25ºC, 125ºC
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
22
24
26
28
30
32
34
36
38
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 1Ω, V
GS
= -10V
V
DS
= - 30V
I
D
= - 25A
I
D
= - 50A
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
0
40
80
120
160
200
240
280
02468101214161820
R
G
- Ohms
t
f
- Nanoseconds
20
60
100
140
180
220
260
300
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= -10V
V
DS
= - 30V
I
D
= - 25A, - 50A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA140P05T IXTP140P05T
IXTH140P05T
IXYS REF: T_140P05T(A6)11-08-10-A
Fig. 19. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
P1-P3P4-P6

IXTP140P05T

Mfr. #:
Buy IXTP140P05T
Manufacturer:
Littelfuse
Description:
MOSFET -140 Amps -50V 0.008 Rds
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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