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IRF1405ZLPBF
P1-P3
P4-P6
P7-P9
P10-P12
IRF1405Z/S/LPbF
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
V
DS
, D
rai
n-to-
Sour
ce Vol
tage (V
)
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHO
RTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0
20
40
60
80
100
120
Q
G
Tot
al Gat
e Charge (nC
)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 44V
V
DS
= 28V
I
D
= 75A
0.0
0.5
1.0
1.5
2.0
2.5
V
SD
, S
ource-to-
Drai
n Vol
tage (V
)
0.10
1.00
10.00
100.00
1000.00
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°
C
T
J
= 175°
C
V
GS
= 0V
1
10
100
1000
V
DS
, D
rai
n-to-S
ource Vol
tage (V
)
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
1msec
10msec
OPERATION IN THIS AREA
LIM
ITED BY R
DS
(on)
100µsec
Tc =
25°C
Tj
= 175°
C
Si
ngle Pul
se
IRF1405Z/S/LPbF
www.irf.com
5
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
25
50
75
100
125
150
175
T
C
, C
ase Tem
perat
ure (°C
)
0
25
50
75
100
125
150
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Limi
ted By
Package
-60
-40
-20
0
20
40
60
80
100
120
140
160
180
T
J
, Junct
ion Temper
ature (°
C)
0.5
1.0
1.5
2.0
2.5
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 75A
V
GS
= 10V
1E-006
1E-
005
0.0001
0.001
0.01
0.1
1
10
t
1
, R
ectangul
ar Pul
se Durati
on (sec)
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D =
0.50
0.02
0.01
0.05
SINGLE PUL
SE
( THERMAL RESPO
NSE )
Notes
:
1. Du
ty Fa
c
tor D = t1
/t2
2. P
eak Tj =
P dm x Zt
hjc + T
c
IRF1405Z/S/LPbF
6
www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T
.
V
DS
I
D
I
G
3mA
V
GS
.3
µ
F
50K
Ω
.2
µ
F
12V
Current
Regulator
Same
Type
as
D.U.T
.
Current
Sampling
Resistors
+
-
10 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
Fig 14.
Threshold Voltage vs. Temperature
R
G
I
AS
0.01
Ω
t
p
D.
U.
T
L
V
DS
+
-
V
DD
DRI
V
ER
A
15V
20V
V
GS
25
50
75
100
125
150
175
St
arti
ng T
J
, Junct
ion Temper
ature (
°C
)
0
100
200
300
400
500
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TO
P 31A
53A
BO
TTOM
7
5A
-75
-50
-25
0
25
50
75
100
125
150
175
200
T
J
, T
emperatur
e ( °C )
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 250µA
P1-P3
P4-P6
P7-P9
P10-P12
IRF1405ZLPBF
Mfr. #:
Buy IRF1405ZLPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 55V 75A TO-262
Lifecycle:
New from this manufacturer.
Delivery:
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