SI4410BDY-T1-E3

Vishay Siliconix
Si4410BDY
Document Number: 72211
S09-0705-Rev. D, 27-Apr-09
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
TrenchFET
®
Power MOSFET
100 % R
g
Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Battery Switch
Load Switch
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
30
0.0135 at V
GS
= 10 V
10
0.020 at V
GS
= 4.5 V
8
SO-8
S
S
S
G
D
D
D
D
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4410BDY-T1-E3 (Lead (Pb)-free)
Si4410BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
G
D
S
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
10 7.5
A
T
A
= 70 °C
86
Pulsed Drain Current (10 µs Pulse Width)
I
DM
50
Continuous Source Current (Diode Conduction)
a
I
S
2.3 1.26
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
2.5 1.4
W
T
A
= 70 °C
1.6 0.9
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t 10 s
R
thJA
40 50
°C/W
Steady State 70 90
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
25 30
www.vishay.com
2
Document Number: 72211
S09-0705-Rev. D, 27-Apr-09
Vishay Siliconix
Si4410BDY
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
1.0 3.0 V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
1
µA
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
5
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V
20 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 10 A
0.011 0.0135
Ω
V
GS
= 4.5 V, I
D
= 5 A
0.0165 0.020
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 10 A
25 S
Diode Forward Voltage
a
V
SD
I
S
= 2.3 A, V
GS
= 0 V
0.76 1.1 V
Dynamic
b
Gate Charge
Q
g
V
DS
= 15 V, V
GS
= 5 V, I
D
= 10 A
13 20
nC
Total Gate Charge
Q
gt
V
DS
= 15 V, V
GS
= 10 V, I
D
= 10 A
25 40
Gate-Source Charge
Q
gs
5.5
Gate-Drain Charge
Q
gd
3.7
Gate Resistance
R
g
f = 1 MHz 0.5 1.6 2.7 Ω
Tur n -On D e l ay Time
t
d(on)
V
DD
= 25 V, R
L
= 25 Ω
I
D
1 A, V
GEN
= 10 V, R
g
= 6 Ω
10 15
ns
Rise Time
t
r
10 15
Turn-Off Delay Time
t
d(off)
40 60
Fall Time
t
f
15 25
Source-Drain Reverse Recovery
Time
t
rr
I
F
= 2.3 A, dI/dt = 100 A/µs
35 70
Output Characteristics
0
10
20
30
40
50
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
GS
= 10 V thru 5 V
3 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
4 V
2 V
Transfer Characteristics
0
10
20
30
40
50
012345
T
C
= 125 °C
- 55 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
25 °C
Document Number: 72211
S09-0705-Rev. D, 27-Apr-09
www.vishay.com
3
Vishay Siliconix
Si4410BDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0 1020304050
V
GS
= 10 V
- On-Resistance (Ω)R
DS(on)
I
D
- Drain Current (A)
V
GS
= 4.5 V
0
2
4
6
8
10
0 5 10 15 20 25
V
DS
= 15 V
I
D
= 10 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
1.0 1.2
1
10
50
0 0.2 0.4 0.6 0.8
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
400
800
1200
1600
2000
0 6 12 18 24 30
C
rss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
oss
C
iss
0.0
0.4
0.8
1.2
1.6
2.0
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 10 V
I
D
= 10 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)
0.00
0.02
0.04
0.06
0.08
0.10
0246810
I
D
= 10 A
- On-Resistance (Ω)
R
DS(on)
V
GS
- Gate-to-Source Voltage (V)

SI4410BDY-T1-E3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SI4134DY-T1-GE3
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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