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SI4410BDY-T1-E3

P1-P3P4-P6P7-P9
www.vishay.com
4
Document Number: 72211
S09-0705-Rev. D, 27-Apr-09
Vishay Siliconix
Si4410BDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Threshold Voltage
- 1.0
- 0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
0.6
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
Single Pulse Power
0
30
50
10
20
Power (W)
Time (s)
40
1 100 6001010
-1
10
-2
T
A
= 25 °C
Safe Operating Area, Junction-to-Case
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
100
1
0.1 1 10 100
0.01
10
1 s
0.1
T
A
= 25 °C
Single Pulse
10 ms
100 ms
100 s, DC
*
DS(on)
Limited by R
10 s
1 ms
100 µs, 10 µs
- Drain Current (A)
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1 10 60010
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 70 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Document Number: 72211
S09-0705-Rev. D, 27-Apr-09
www.vishay.com
5
Vishay Siliconix
Si4410BDY
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72211
.
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
11010
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Vishay Siliconix
Package Information
Document Number: 71192
11-Sep-06
www.vishay.com
1
DIM
MILLIMETERS INCHES
Min Max Min Max
A 1.35 1.75 0.053 0.069
A
1
0.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q0°8°0°8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
4
3
1
2
5
6
8
7
HE
h x 45
C
All Leads
q
0.101 mm
0.004"
L
BA
1
A
e
D
0.25 mm (Gage Plane)
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
S
P1-P3P4-P6P7-P9

SI4410BDY-T1-E3

Mfr. #:
Buy SI4410BDY-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SI4134DY-T1-GE3
Lifecycle:
New from this manufacturer.
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