Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
S
O
T
2
3
PMV65XP
20 V, single P-channel Trench MOSFET
12 February 2013 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
Low threshold voltage
Low on-state resistance
Trench MOSFET technology
3. Applications
Low power DC-to-DC converters
Load switching
Battery management
Battery powered portable equipment
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage - - -20 V
V
GS
gate-source voltage
T
j
= 25 °C
-12 - 12 V
I
D
drain current V
GS
= -4.5 V; T
sp
= 25 °C - - -4.3 A
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
= -4.5 V; I
D
= -2.8 A; T
j
= 25 °C - 58 74
NXP Semiconductors
PMV65XP
20 V, single P-channel Trench MOSFET
PMV65XP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved
Product data sheet 12 February 2013 2 / 14
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
2 S source
3 D drain
1 2
3
TO-236AB (SOT23)
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PMV65XP TO-236AB plastic surface-mounted package; 3 leads SOT23
7. Marking
Table 4. Marking codes
Type number Marking code
[1]
PMV65XP %M9
[1] % = placeholder for manufacturing site code
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage - -20 V
V
GS
gate-source voltage
T
j
= 25 °C
-12 12 V
V
GS
= -4.5 V; T
sp
= 25 °C - -4.3 A
V
GS
= -4.5 V; T
amb
= 25 °C [1] - -2.8 A
I
D
drain current
V
GS
= -4.5 V; T
amb
= 100 °C [1] - -1.8 A
I
DM
peak drain current T
amb
= 25 °C; single pulse; t
p
≤ 10 µs - -16 A
[2] - 480 mWT
amb
= 25 °C
[1] - 833 mW
P
tot
total power dissipation
T
sp
= 25 °C - 4165 mW

PMV65XPVL

Mfr. #:
Manufacturer:
Nexperia
Description:
MOSFET PMV65XP/TO-236AB/REEL 11" Q3/T
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet