NXP Semiconductors
PMV65XP
20 V, single P-channel Trench MOSFET
PMV65XP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved
Product data sheet 12 February 2013 6 / 14
Symbol Parameter Conditions Min Typ Max Unit
V
GS
= -12 V; V
DS
= 0 V; T
j
= 25 °C - - -100 nAI
GSS
gate leakage current
V
GS
= 12 V; V
DS
= 0 V; T
j
= 25 °C - - 100 nA
V
GS
= -4.5 V; I
D
= -2.8 A; T
j
= 25 °C - 58 74 mΩ
V
GS
= -4.5 V; I
D
= -2.8 A; T
j
= 150 °C - 82 105 mΩ
V
GS
= -2.5 V; I
D
= -2.3 A; T
j
= 25 °C - 67 92 mΩ
R
DSon
drain-source on-state
resistance
V
GS
= -1.8 V; I
D
= -1 A; T
j
= 25 °C - 87 135 mΩ
g
fs
forward
transconductance
V
DS
= -10 V; I
D
= -2.8 A; T
j
= 25 °C - 15 - S
Dynamic characteristics
Q
G(tot)
total gate charge - 7.7 - nC
Q
GS
gate-source charge - 1 - nC
Q
GD
gate-drain charge
V
DS
= -6 V; I
D
= -2.8 A; V
GS
= -4.5 V;
T
j
= 25 °C
- 1.65 - nC
C
iss
input capacitance - 744 - pF
C
oss
output capacitance - 65 - pF
C
rss
reverse transfer
capacitance
V
DS
= -20 V; f = 1 MHz; V
GS
= 0 V;
T
j
= 25 °C
- 53 - pF
t
d(on)
turn-on delay time - 7 - ns
t
r
rise time - 18 - ns
t
d(off)
turn-off delay time - 135 - ns
t
f
fall time
V
DS
= -6 V; V
GS
= -4.5 V; R
G(ext)
= 6 Ω;
T
j
= 25 °C; I
D
= -1 A
- 68 - ns
Source-drain diode
V
SD
source-drain voltage I
S
= -0.9 A; V
GS
= 0 V; T
j
= 25 °C - -0.8 -1.2 V
V
DS
(V)
0 -5.00-3.75-1.25 -2.50
017aaa841
-6
-3
-9
-12
I
D
(A)
0
-4.5 V
-2.5 V
V
GS
= -1.8 V
-2 V
-1.7 V
-1.6 V
-1.5 V
-1.3 V
T
j
= 25 °C
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
017aaa850
10
-4
10
-5
10
-3
I
D
(A)
10
-6
V
GS
(V)
0 1.00.80.4 0.60.2
min typ
max
T
j
= 25 °C; V
DS
= -5 V
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
