IXFT16N120P Datasheet IXFH16N120P, IXFT16N120P | P1-P3

DS99896B(10/12)

V

DSS

= 1200V

I

D25

= 16A

R

DS(on)

≤≤

≤ 950m

ΩΩ

Ω

t

rr

≤≤

≤ 300ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Features

z

International Standard Packages

z

Fast Recovery Diode

z

Avalanche Rated

z

Low Package Inductance

Advantages

z

Easy to Mount

z

Space Savings

z

High Power Density

Applications

z

High Voltage Switch-mode and

Resonant-Mode Power Supplies

z

High Voltage Pulse Power Applications

z

High Voltage Discharge Circuits in

Lasers Pulsers, Spark Igniters, RF

Generators

z

High Voltage DC-DC converters

z

High Voltage DC-AC inverters

IXFT16N120P

IXFH16N120P

Polar

TM

HiPerFET

TM

Power MOSFETs

G = Gate D = Drain

S = Source Tab = Drain

TO-247 (IXFH)

G

S

D (Tab)

D

TO-268 (IXFT)

S

G

D (Tab)

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C 1200 V

V

DGR

T

J

= 25°C to 150°C, R

GS

= 1MΩ 1200 V

V

GSS

Continuous ± 30 V

V

GSM

Transient ± 40 V

I

D25

T

C

= 25°C 16 A

I

DM

T

C

= 25°C, Pulse Width Limited by T

JM

35 A

I

A

T

C

= 25°C8 A

E

AS

T

C

= 25°C 800 mJ

dv/dt I

S

≤ I

DM

, V

DD

≤ V

DSS

, T

J

≤ 150°C 15 V/ns

P

D

T

C

= 25°C 660 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6mm (0.062in.) from Case for 10s 300 °C

T

sold

Plastic Body for 10 seconds 260 °C

M

d

Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in.

Weight TO-268 4 g

TO-247 6 g

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 1mA 1200 V

V

GS(th)

V

DS

= V

GS

, I

D

= 1mA 3.5 6.5 V

I

GSS

V

GS

= ±30V, V

DS

= 0V ±200 nA

I

DSS

V

DS

= V

DSS

, V

GS

= 0V 25 μA

T

J

= 125°C 2.5 mA

R

DS(on)

V

GS

= 10V, I

D

= 0.5 • I

D25

, Note 1 950 mΩ

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFT16N120P

IXFH16N120P

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fs

V

DS

= 20V, I

D

= 0.5 • I

D25

, Note 1 11 17 S

C

iss

6900 pF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 390 pF

C

rss

48 pF

R

Gi

Gate Input Resistance 1.4 Ω

t

d(on)

35 ns

t

r

28 ns

t

d(off)

66 ns

t

f

35 ns

Q

g(on)

120 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

37 nC

Q

gd

47 nC

R

thJC

0.19 °C/W

R

thCS

TO-247 0.21 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

I

S

V

GS

= 0V 16 A

I

SM

Repetitive, Pulse Width Limited by T

JM

64 A

V

SD

I

F

= I

S

, V

GS

= 0V, Note 1 1.5 V

t

rr

300 ns

I

RM

7.5

A

Q

RM

0.75 μC

I

F

= 8A, -di/dt = 100A/μs

V

R

= 100V, V

GS

= 0V

Resistive Switching Times

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

R

G

= 2Ω (External)

TO-247 Outline

Terminals: 1 - Gate 2 - Drain

3 - Source

TO-268 Outline

Terminals: 1 - Gate 2,4 - Drain

3 - Source

e

∅ P

1 2 3

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A

1

2.2 2.54 .087 .102

A

2

2.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b

1

1.65 2.13 .065 .084

b

2

2.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

IXFT16N120P

IXFH16N120P

Fig. 1. Output Characteristics T

J

= @ 25ºC

0

2

4

6

8

10

12

14

16

0 2 4 6 8 10 12 14 16

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

5V

6V

Fig. 2. Extended Output Characteristics T

J

= @ 25ºC

0

4

8

12

16

20

24

0 5 10 15 20 25 30

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

5V

6V

7V

Fig. 3. Output Characteristics T

J

= @ 125ºC

0

2

4

6

8

10

12

14

16

0 5 10 15 20 25 30 35

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

5V

6V

Fig. 4. R

DS(on)

Normalized to I

D

= 8A Value vs.

Junction Temperature

0.4

0.8

1.2

1.6

2.0

2.4

2.8

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 8A

I

D

= 16A

Fig. 5. R

DS(on)

Normalized to I

D

= 8A Value vs.

Drain Current

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

0 2 4 6 8 10 12 14 16 18 20 22 24 26

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Maximum Drain Current vs.

Case Temperature

0

2

4

6

8

10

12

14

16

18

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

IXFT16N120P

IXFT16N120P

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