IXFT16N120P

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IXFT16N120P
IXFH16N120P
Fig. 7. Input Admittance
0
2
4
6
8
10
12
14
16
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
2
4
6
8
10
12
14
16
18
0246810121416
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
5
10
15
20
25
30
35
40
45
50
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20406080100120
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 600V
I
D
= 8A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Breakdown and Threshold Voltages vs.
Junction Temperature
0.7
0.8
0.9
1
1.1
1.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
BV
DSS
& V
GS(th)
- Normalized
BV
DSS
V
GS(th)
© 2012 IXYS CORPORATION, All Rights Reserved
IXFT16N120P
IXFH16N120P
IXYS REF: F_16N120P(85) 09-12-12-B
Fig. 12. Maximum Transient Thermal Impedance
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 13. Maximum Transient Thermal Impedance
aaa
0.30

IXFT16N120P

Mfr. #:
Manufacturer:
Littelfuse
Description:
MOSFET 16 Amps 1200V 1 Rds
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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