Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
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use http://www.nexperia.com
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
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Kind regards,
Team Nexperia
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2
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2
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D
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PMPB29XNE
30 V, single N-channel Trench MOSFET
26 November 2014 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
2. Features and benefits
1 kV ESD protection
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Tin-plated, 100% solderable side pads for optical solder inspection
3. Applications
Charging switch for portable devices
DC-to-DC converters
Power management in battery-driven portables
Hard disk and computing power management
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage - - 30 V
V
GS
gate-source voltage
T
j
= 25 °C
-12 - 12 V
I
D
drain current V
GS
= 4.5 V; T
amb
= 25 °C; t ≤ 5 s [1] - - 5 A
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
= 4.5 V; I
D
= 5 A; T
j
= 25 °C - 28 33
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
NXP Semiconductors
PMPB29XNE
30 V, single N-channel Trench MOSFET
PMPB29XNE All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 26 November 2014 2 / 15
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 D drain
3 G gate
4 S source
5 D drain
6 D drain
7 D drain
8 S source
6
5
7
8
4
Transparent top view
1
2
3
DFN2020MD-6 (SOT1220)
017aaa255
G
D
S
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PMPB29XNE DFN2020MD-6 DFN2020MD-6: plastic thermal enhanced ultra thin small outline
package; no leads; 6 terminals
SOT1220
7. Marking
Table 4. Marking codes
Type number Marking code
PMPB29XNE 1N

PMPB29XNE,115

Mfr. #:
Manufacturer:
Nexperia
Description:
MOSFET PMPB29XNE/SOT1220/REEL 7" Q1/T
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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