NXP Semiconductors
PMPB29XNE
30 V, single N-channel Trench MOSFET
PMPB29XNE All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 26 November 2014 9 / 15
Q
G
(nC)
0 15105
017aaa916
1.5
3.0
4.5
V
GS
(V)
0.0
I
D
= 5 A; V
DS
= 15 V; T
amb
= 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
V
SD
(V)
0.0 0.80.60.2 0.4
017aaa917
1
2
3
I
S
(A)
0
T
j
= 25 °CT
j
= 150 °C
V
GS
= 0 V
Fig. 15. Source current as a function of source-drain
voltage; typical values
NXP Semiconductors
PMPB29XNE
30 V, single N-channel Trench MOSFET
PMPB29XNE All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 26 November 2014 10 / 15
11. Test information
t
1
t
2
P
t
006aaa812
duty cycle δ =
t
1
t
2
Fig. 16. Duty cycle definition
12. Package outline
12-04-30Dimensions in mm
1.1
1.3
1.9
2.1
1.9
2.1
1.0
1.2
3
2
1
4
5
6
0.51
0.61
0.2
0.3
0.65
0.25
0.35
0.2
0.3
Fig. 17. Package outline DFN2020MD-6 (SOT1220)
NXP Semiconductors
PMPB29XNE
30 V, single N-channel Trench MOSFET
PMPB29XNE All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 26 November 2014 11 / 15
13. Soldering
1.35
1.25
1.05
0.9
1.1
1.2
2.5
0.935 0.935
SOT1220Footprint information for reflow soldering of DFN2020MD-6 package
sot1220_fr
occupied area
solder land
solder resist
solder land plus solder paste
solder paste deposit
Dimensions in mm
0.33 (6×)
0.76
0.66
0.56
0.25 0.35 0.45
0.25 (6×)
0.35 (6×)
0.65
0.65
0.45 (6×)
0.43 (6×)
0.53 (6×)
2.06
0.775
0.285
Fig. 18. Reflow soldering footprint for DFN2020MD-6 (SOT1220)

PMPB29XNE,115

Mfr. #:
Manufacturer:
Nexperia
Description:
MOSFET PMPB29XNE/SOT1220/REEL 7" Q1/T
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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