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BUK9675-55A,118

P1-P3P4-P6P7-P9P10-P12P13-P14
BUK9675-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 8 February 2011 6 of 13
NXP Semiconductors
BUK9675-55A
N-channel TrenchMOS logic level FET
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
03nd43
0
20
40
60
0246810
V
DS
(V)
I
D
(A)
2.2
3
4
5
10
6
7
V
GS
(V) = 8
03nd42
40
60
80
100
120
246810
V
GS
(V)
R
DSon
(mΩ)
03aa36
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
0123
V
GS
(V)
I
D
(A)
maxtypmin
03nd40
0
5
10
15
0 5 10 15 20 25
I
D
(A)
g
fs
(S)
BUK9675-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 8 February 2011 7 of 13
NXP Semiconductors
BUK9675-55A
N-channel TrenchMOS logic level FET
Fig 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 10. Gate-source voltage as a function of turn-on
gate charge; typical values
Fig 11. Gate-source threshold voltage as a function of
junction temperature
Fig 12. Drain-source on-state resistance as a function
of drain current; typical values
03nd41
0
5
10
15
20
25
012345
V
GS
(V)
I
D
(A)
T
j
= 175 °CT
j
= 25 °C
03nd39
0
1
2
3
4
5
0 5 10 15
Q
G
(nC)
V
GS
(V)
V
DD
= 14(V)
V
DD
= 44(V)
03aa33
0
0.5
1
1.5
2
2.5
-60 0 60 120 180
T
j
(
°
C)
V
GS(th)
(V)
max
typ
min
03nd44
40
60
80
100
120
140
160
180
0 1020304050
I
D
(A)
R
DSon
(mΩ)
3
3.2
3.4
3.8
4
V
GS
(V) = 5
3.6
BUK9675-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 8 February 2011 8 of 13
NXP Semiconductors
BUK9675-55A
N-channel TrenchMOS logic level FET
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
T
j
(°C)
−60 180120060
03aa28
1.2
0.6
1.8
2.4
a
0
03nd45
0
200
400
600
800
1000
1200
10
−2
10
−1
1 10 10
2
V
DS
(V)
C
(pF)
C
oss
C
rss
C
iss
03nd38
0
10
20
30
40
50
0 0.5 1.0 1.5
V
SD
(V)
I
S
(A)
T
j
= 175 °C
T
j
= 25 °C
P1-P3P4-P6P7-P9P10-P12P13-P14

BUK9675-55A,118

Mfr. #:
Buy BUK9675-55A,118
Manufacturer:
Nexperia
Description:
MOSFET TAPE13 PWR-MOS
Lifecycle:
New from this manufacturer.
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