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NDF10N60ZH

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 13
1 Publication Order Number:
NDF10N60Z/D
NDF10N60Z
N-Channel Power MOSFET
600 V, 0.75 W
Features
• Low ON Resistance
• Low Gate Charge
• ESD Diode−Protected Gate
• 100% Avalanche Tested
• 100% R
g
Tested
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Rating
Symbol NDF Unit
Drain−to−Source Voltage V
DSS
600 V
Continuous Drain Current, R
q
JC
(Note 1)
I
D
10 A
Continuous Drain Current
T
A
= 100°C, R
q
JC
(Note 1)
I
D
6.0 A
Pulsed Drain Current,
t
P
= 10 ms
I
DM
40 A
Power Dissipation, R
q
JC
P
D
39 W
Gate−to−Source Voltage V
GS
±30 V
Single Pulse Avalanche Energy
(L = 6.0 mH, I
D
= 10 A)
E
AS
300 mJ
ESD (HBM) (JESD22−A114) V
esd
3900 V
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
T
A
= 25°C) (Figure 13)
V
ISO
4500 V
Peak Diode Recovery (Note 2) dV/dt 4.5 V/ns
MOSFET dV/dt dV/dt 60 V/ns
Continuous Source Current (Body Diode) I
S
10 A
Maximum Temperature for
Soldering Leads
T
L
260 °C
Operating Junction and
Storage Temperature Range
T
J
, T
stg
−55 to 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Limited by maximum junction temperature.
2. I
S
≤ 10 A, di/dt ≤ 200 A/ms, V
DD
= 80% BV
DSS
www.onsemi.com
V
DSS
(@ T
Jmax
)R
DS(ON)
(MAX) @ 5 A
650 V
0.75 W
N−Channel
G (1)
D (2)
S (3)
See detailed ordering, marking and shipping information on
page 6 of this data sheet.
ORDERING AND MARKING INFORMATION
NDF10N60ZG
NDF10N60ZH
TO−220FP
CASE 221AH
1
2
3
NDF10N60Z
www.onsemi.com
2
THERMAL RESISTANCE
Parameter Symbol NDF10N60Z Unit
Junction−to−Case (Drain)
R
q
JC
3.2
°C/W
Junction−to−Ambient Steady State (Note 3)
R
q
JA
50
3. Insertion mounted
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic
Test Conditions Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V
GS
= 0 V, I
D
= 1 mA BV
DSS
600 V
Breakdown Voltage Temperature Coeffi-
cient
Reference to 25°C,
I
D
= 1 mA
DBV
DSS
/
DT
J
0.6 V/°C
Drain−to−Source Leakage Current
V
DS
= 600 V, V
GS
= 0 V
25°C
I
DSS
1 mA
150°C 50
Gate−to−Source Forward Leakage V
GS
= ±20 V I
GSS
±10
mA
ON CHARACTERISTICS (Note 4)
Static Drain−to−Source
On−Resistance
V
GS
= 10 V, I
D
= 5.0 A R
DS(on)
0.65 0.75
W
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 100 mA
V
GS(th)
3.0 3.9 4.5 V
Forward Transconductance V
DS
= 15 V, I
D
= 10 A g
FS
7.9 S
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 5)
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
C
iss
1097 1373 1645
pF
Output Capacitance (Note 5) C
oss
118 150 178
Reverse Transfer Capacitance (Note 5) C
rss
20 35 50
Total Gate Charge (Note 5)
V
DD
= 300 V, I
D
= 10 A,
V
GS
= 10 V
Q
g
23 47 68
nC
Gate−to−Source Charge (Note 5) Q
gs
5.0 9.0 14
Gate−to−Drain (“Miller”) Charge (Note 5) Q
gd
12 26 36
Plateau Voltage V
GP
6.4 V
Gate Resistance R
g
0.5 1.5 4.5
W
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
V
DD
= 300 V, I
D
= 10 A,
V
GS
= 10 V, R
G
= 5 Ω
t
d(on)
15
ns
Rise Time t
r
31
Turn−Off Delay Time t
d(off)
40
Fall Time t
f
23
SOURCE−DRAIN DIODE CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Diode Forward Voltage I
S
= 10 A, V
GS
= 0 V V
SD
1.6 V
Reverse Recovery Time
V
GS
= 0 V, V
DD
= 30 V
I
S
= 10 A, di/dt = 100 A/ms
t
rr
395 ns
Reverse Recovery Charge Q
rr
3.0
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
5. Guaranteed by design.
NDF10N60Z
www.onsemi.com
3
TYPICAL CHARACTERISTICS
6.0 V
5.8 V
5.4 V
5.0 V
5.6 V
6.2 V
6.4 V
6.6 V
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) V
GS
, GATE−TO−SOURCE VOLTAGE (V)
24201612840
0
2
4
8
10
14
18
20
8765432
0
2
6
8
10
14
18
20
Figure 3. On−Resistance vs. Gate Voltage Figure 4. On−Resistance vs. Drain Current
and Gate Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V) I
D
, DRAIN CURRENT (A)
1098765
0.60
0.65
0.70
0.75
0.80
12.5107.55.02.5
0.60
0.65
0.70
0.75
0.80
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1251007550250−25−50
0.2
0.7
1.2
1.7
2.2
2.7
6005004003002001000
10
100
1000
10,000
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RES-
ISTANCE (NORMALIZED)
I
DSS
, LEAKAGE (nA)
6
12
16
T
J
= 25°C
V
GS
= 15 V
10 V
7.0 V
4
12
16
T
J
= 25°C
T
J
= −55°C
T
J
= 150°C
V
DS
= 30 V
T
J
= 25°C
I
D
= 5 A
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
T
J
= 25°C
V
GS
= 10 V
150
I
D
= 5 A
V
GS
= 10 V
V
GS
= 0 V
T
J
= 150°C
T
J
= 100°C
P1-P3P4-P6P7-P7

NDF10N60ZH

Mfr. #:
Buy NDF10N60ZH
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET 600V 10A
Lifecycle:
New from this manufacturer.
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