NDF10N60Z
www.onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) Q
g
, TOTAL GATE CHARGE (nC)
1751501251007550250
0
500
1000
1500
2000
2500
3000
3500
45403530201050
0
5
10
15
20
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Source Current vs.
Forward Voltage
R
G
, GATE RESISTANCE (W)
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
100101
10
100
1000
1.00.90.80.70.60.50.4
0
2
4
6
8
10
Figure 11. Maximum Rated Forward Biased
Safe Operating Area for NDF10N60Z
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1000100100.1
0.01
0.1
1
10
100
C, CAPACITANCE (pF)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
I
S
, SOURCE CURRENT (A)
I
D
, DRAIN CURRENT (A)
200
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
C
iss
C
oss
C
rss
I
D
= 10 A
T
J
= 25°C
15 25 50 55
V
DS
V
GS
QT
Q
gs
Q
gd
0
100
200
300
400
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
DD
= 300 V
I
D
= 10 A
V
GS
= 10 V
t
d(off)
t
d(on)
t
r
t
f
V
GS
= 0 V
T
J
= 25°C
V
GS
≤ 30 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
100 ms 10 ms
10 ms
1 ms
dc
1
