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BZT52B16-E3-18

P1-P3P4-P6P7-P8
BZT52-Series
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 08-Nov-16
1
Document Number: 85760
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Zener Diodes
FEATURES
• Silicon planar Zener diodes
• The Zener voltages are graded according to
the international E24 standard
• AEC-Q101 qualified available
• ESD capability according to AEC-Q101:
Human body model > 8 kV
Machine model > 800 V
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
PARAMETER VALUE UNIT
V
Z
range nom. 2.4 to 75 V
Test current I
ZT
2.5; 5 mA
V
Z
specification Pulse current
Int. construction Single
Available
ORDERING INFORMATION
DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY
BZT52-series
BZT52C2V4-E3-08 to BZT52C75-E3-08
3000 (8 mm tape on 7" reel) 15 000/box
BZT52B2V4-E3-08 to BZT52B75-E3-08
BZT52C2V4-HE3-08 to BZT52C75-HE3-08
BZT52B2V4-HE3-08 to BZT52B75-HE3-08
BZT52C2V4-E3-18 to BZT52C75-E3-18
10 000 (8 mm tape on 13" reel) 10 000/box
BZT52B2V4-E3-18 to BZT52B75-E3-18
BZT52C2V4-HE3-18 to BZT52C75-HE3-18
BZT52B2V4-HE3-18 to BZT52B75-HE3-18
PACKAGE
PACKAGE NAME WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE SENSITIVITY
LEVEL
SOLDERING CONDITIONS
SOD-123 10.3 mg UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Power dissipation
Diode on ceramic substrate 0.7 mm; 5 mm
2
pad areas
P
tot
500 mW
Diode on ceramic substrate 0.7 mm; 2.5 mm
2
pad areas
P
tot
410 mW
Zener current See table “Electrical Characteristics “
Thermal resistance junction to ambient air
Valid provided that electrodes are kept at
ambient temperature
R
thJA
300 K/W
Junction temperature
T
j
150 °C
Storage temperature range
T
stg
-65 to +150 °C
Operating temperature range
T
op
-55 to +150 °C
BZT52-Series
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 08-Nov-16
2
Document Number: 85760
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
•I
ZT1
= 5 mA, I
ZT2
= 1 mA
(1)
Measured with pulses t
p
= 5 ms
(2)
I
ZT1
= 2.5 mA
(3)
I
ZT2
= 0.5 mA
(4)
Valid provided that electrodes are kept at ambient temperature
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PART
NUMBER
MARKING
CODE
ZENER VOLTAGE
RANGE
(1)
TEST
CURRENT
REVERSE
VOLTAGE
DYNAMIC
RESISTANCE
TEMP.
COEFFICIENT
ADMISSABLE ZENER
CURRENT
(4)
V
Z
at I
ZT1
I
ZT1
I
ZT2
V
R
at I
R
Z
Z
at
I
ZT1
Z
ZK
at
I
ZT2
VZ
I
Z
at
T
amb
= 45 °C
I
Z
at
T
amb
= 25 °C
V mA V nA 10
-4
/°C mA
MIN. NOM. MAX.
BZT52C2V4 W1 2.2 2.4 2.6 5 1 - - 85 600 -9 to -4 - -
BZT52C2V7 W2 2.5 2.7 2.9 5 1 - - 75 (< 83) < 500 -9 to -4 113 134
BZT52C3V0 W3 2.8 3.0 3.2 5 1 - - 80 (< 95) < 500 -9 to -3 98 118
BZT52C3V3 W4 3.1 3.3 3.5 5 1 - - 80 (< 95) < 500 -8 to -3 92 109
BZT52C3V6 W5 3.4 3.6 3.8 5 1 - - 80 (< 95) < 500 -8 to -3 85 100
BZT52C3V9 W6 3.7 3.9 4.1 5 1 - - 80 (< 95) < 500 -7 to -3 77 92
BZT52C4V3 W7 4 4.3 4.6 5 1 - - 80 (< 95) < 500 -6 to -1 71 84
BZT52C4V7 W8 4.4 4.7 5 5 1 - - 70 (< 78) < 500 -5 to +2 64 76
BZT52C5V1 W9 4.8 5.1 5.4 5 1 > 0.8 100 30 (< 60) < 480 -3 to +4 56 67
BZT52C5V6 WA 5.2 5.6 6 5 1 > 1 100 10 (< 40) < 400 -2 to +6 50 59
BZT52C6V2 WB 5.8 6.2 6.6 5 1 > 2 100 4.8 (< 10) < 200 -1 to +7 45 54
BZT52C6V8 WC 6.4 6.8 7.2 5 1 > 3 100 4.5 (< 8) < 150 +2 to +7 41 49
BZT52C7V5 WD 7 7.5 7.9 5 1 > 5 100 4 (< 7) < 50 +3 to +7 37 44
BZT52C8V2 WE 7.7 8.2 8.7 5 1 > 6 100 4.5 (< 7) < 50 +4 to +7 34 40
BZT52C9V1 WF 8.5 9.1 9.6 5 1 > 7 100 4.8 (< 10) < 50 +5 to +8 30 36
BZT52C10 WG 9.4 10 10.6 5 1 > 7.5 100 5.2 (< 15) < 70 +5 to +8 28 33
BZT52C11 WH 10.4 11 11.6 5 1 > 8.5 100 6 (< 20) < 70 +5 to +9 25 30
BZT52C12 WI 11.4 12 12.7 5 1 > 9 100 7 (< 20) < 90 +6 to +9 23 28
BZT52C13 WK 12.4 13 14.1 5 1 > 10 100 9 (< 25) < 110 +7 to +9 21 25
BZT52C15 WL 13.8 15 15.6 5 1 > 11 100 11 (< 30) < 110 +7 to +9 19 23
BZT52C16 WM 15.3 16 17.1 5 1 > 12 100 13 (< 40) < 170 +8 to +9.5 17 20
BZT52C18 WN 16.8 18 19.1 5 1 > 14 100 18 (< 50) < 170 +8 to +9.5 15 18
BZT52C20 WO 18.8 20 21.2 5 1 > 15 100 20 (< 50) < 220 +8 to +10 14 17
BZT52C22 WP 20.8 22 23.3 5 1 > 17 100 25 (< 55) < 220 +8 to +10 13 16
BZT52C24 WR 22.8 24 25.6 5 1 > 18 100 28 (< 80) < 220 +8 to +10 11 13
BZT52C27 WS 25.1 27 28.9 5 1 > 20 100 30 (< 80) < 250 +8 to +10 10 12
BZT52C30 WT 28 30 32 5 1 > 22.5 100 35 (< 80) < 250 +8 to +10 9 10
BZT52C33 WU 31 33 35 5 1 > 25 100 40 (< 80) < 250 +8 to +10 8 9
BZT52C36 WW 34 36 38 5 1 > 27 100 40 (< 90) < 250 +8 to +10 8 9
BZT52C39 WX 37 39 41 5 1 > 29 100 50 (< 90) < 300 +10 to +12 7 8
BZT52C43 WY 40 43 46 5 1 > 32 100 60 (< 100) < 700 +10 to +12 6 7
BZT52C47 WZ 44 47 50 5 1 > 35 100 70 (< 100) < 750 +10 to +12 5 6
BZT52C51 X1 48 51 54 5 1 > 38 100 70 (< 100) < 750 +10 to +12 5 6
BZT52C56 X2 52 56 60 2.5 0.5 - - < 135
(2)
< 1000
(3)
typ. +10
(2)
--
BZT52C62 X3 58 62 66 2.5 0.5 - - < 150
(2)
< 1000
(3)
typ. +10
(2)
--
BZT52C68 X4 64 68 72 2.5 0.5 - - < 200
(2)
< 1000
(3)
typ. +10
(2)
--
BZT52C75 X5 70 75 79 2.5 0.5 - - < 250
(2)
< 1500
(3)
typ. +10
(2)
--
BZT52-Series
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 08-Nov-16
3
Document Number: 85760
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
•I
ZT1
= 5 mA, I
ZT2
= 1 mA
(1)
Measured with pulses t
p
= 5 ms
(2)
I
ZT1
= 2.5 mA
(3)
I
ZT2
= 0.5 mA
(4)
Valid provided that electrodes are kept at ambient temperature
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PART
NUMBER
MARKING
CODE
ZENER VOLTAGE
RANGE
(1)
TEST
CURRENT
REVERSE
VOLTAGE
DYNAMIC
RESISTANCE
TEMP.
COEFFICIENT
ADMISSABLE ZENER
CURRENT
(4)
V
Z
at I
ZT1
I
ZT1
I
ZT2
V
R
at I
R
Z
Z
at I
ZT1
Z
ZK
at
I
ZT2
VZ
I
Z
at
T
amb
= 45 °C
I
Z
at
T
amb
= 25 °C
V mA V nA 10
-4
/°C mA
MIN. NOM. MAX.
BZT52B2V4 W1 2.35 2.4 2.45 5 1 - - 85 600 -9 to -4 - -
BZT52B2V7 W2 2.65 2.7 2.75 5 1 - - 75 (< 83) < 500 -9 to -4 113 134
BZT52B3V0 W3 2.94 3.0 3.06 5 1 - - 80 (< 95) < 500 -9 to -3 98 118
BZT52B3V3 W4 3.23 3.3 3.37 5 1 - - 80 (< 95) < 500 -8 to -3 92 109
BZT52B3V6 W5 3.53 3.6 3.67 5 1 - - 80 (< 95) < 500 -8 to -3 85 100
BZT52B3V9 W6 3.82 3.9 3.98 5 1 - - 80 (< 95) < 500 -7 to -3 77 92
BZT52B4V3 W7 4.21 4.3 4.39 5 1 - - 80 (< 95) < 500 -6 to -1 71 84
BZT52B4V7 W8 4.61 4.7 4.79 5 1 - - 70 (< 78) < 500 -5 to +2 64 76
BZT52B5V1 W9 5 5.1 5.2 5 1 > 0.8 100 30 (< 60) < 480 -3 to +4 56 67
BZT52B5V6 WA 5.49 5.6 5.71 5 1 > 1 100 10 (< 40) < 400 -2 to +6 50 59
BZT52B6V2 WB 6.08 6.2 6.32 5 1 > 2 100 4.8 (< 10) < 200 -1 to +7 45 54
BZT52B6V8 WC 6.66 6.8 6.94 5 1 > 3 100 4.5 (< 8) < 150 +2 to +7 41 49
BZT52B7V5 WD 7.35 7.5 7.65 5 1 > 5 100 4 (< 7) < 50 +3 to +7 37 44
BZT52B8V2 WE 8.04 8.2 8.36 5 1 > 6 100 4.5 (< 7) < 50 +4 to +7 34 40
BZT52B9V1 WF 8.92 9.1 9.28 5 1 > 7 100 4.8 (< 10) < 50 +5 to +8 30 36
BZT52B10 WG 9.8 10 10.2 5 1 > 7.5 100 5.2 (< 15) < 70 +5 to +8 28 33
BZT52B11 WH 10.8 11 11.2 5 1 > 8.5 100 6 (< 20) < 70 +5 to +9 25 30
BZT52B12 WI 11.8 12 12.2 5 1 > 9 100 7 (< 20) < 90 +6 to +9 23 28
BZT52B13 WK 12.7 13 13.3 5 1 > 10 100 9 (< 25) < 110 +7 to +9 21 25
BZT52B15 WL 14.7 15 15.3 5 1 > 11 100 11 (< 30) < 110 +7 to +9 19 23
BZT52B16 WM 15.7 16 16.3 5 1 > 12 100 13 (< 40) < 170 +8 to +9.5 17 20
BZT52B18 WN 17.6 18 18.4 5 1 > 14 100 18 (< 50) < 170 +8 to +9.5 15 18
BZT52B20 WO 19.6 20 20.4 5 1 > 15 100 20 (< 50) < 220 +8 to +10 14 17
BZT52B22 WP 21.6 22 22.4 5 1 > 17 100 25 (< 55) < 220 +8 to +10 13 16
BZT52B24 WR 23.5 24 24.5 5 1 > 18 100 28 (< 80) < 220 +8 to +10 11 13
BZT52B27 WS 26.5 27 27.5 5 1 > 20 100 30 (< 80) < 250 +8 to +10 10 12
BZT52B30 WT 29.4 30 30.6 5 1 > 22.5 100 35 (< 80) < 250 +8 to +10 9 10
BZT52B33 WU 32.3 33 33.7 5 1 > 25 100 40 (< 80) < 250 +8 to +10 8 9
BZT52B36 WW 35.3 36 36.7 5 1 > 27 100 40 (< 90) < 250 +8 to +10 8 9
BZT52B39 WX 38.2 39 39.8 5 1 > 29 100 50 (< 90) < 300 +10 to +12 7 8
BZT52B43 WY 42.1 43 43.9 5 1 > 32 100 60 (< 100) < 700 +10 to +12 6 7
BZT52B47 WZ 46.1 47 47.9 5 1 > 35 100 70 (< 100) < 750 +10 to +12 5 6
BZT52B51 X1 50 51 52 5 1 > 38 100 70 (< 100) < 750 +10 to +12 5 6
BZT52B56 X2 54.9 56 57.1 2.5 0.5 - - < 135
(2)
< 1000
(3)
typ. +10
(2)
--
BZT52B62 X3 60.8 62 63.2 2.5 0.5 - - < 150
(2)
< 1000
(3)
typ. +10
(2)
--
BZT52B68 X4 66.6 68 69.4 2.5 0.5 - - < 200
(2)
< 1000
(3)
typ. +10
(2)
--
BZT52B75 X5 73.5 75 76.5 2.5 0.5 - - < 250
(2)
< 1500
(3)
typ. +10
(2)
--
P1-P3P4-P6P7-P8

BZT52B16-E3-18

Mfr. #:
Buy BZT52B16-E3-18
Manufacturer:
Vishay Semiconductors
Description:
Zener Diodes 16 Volt 0.5W 2%
Lifecycle:
New from this manufacturer.
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