BZT52-Series
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Vishay Semiconductors
Rev. 1.9, 08-Nov-16
4
Document Number: 85760
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TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Forward characteristics
Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature
Fig. 3 - Dynamic Resistance vs. Zener Current
Fig. 4 - Dynamic Resistance vs. Zener Current
Fig. 5 - Dynamic Resistance vs. Zener Current
Fig. 6 - Thermal Differential Resistance vs. Zener Voltage
18114
mA
10
3
10
2
10
-1
10
-2
10
-3
10
-4
10
-5
10
1
I
F
V
F
0 0.2 0.4 0.6 0.8 1V
T
J
= 100 °C
T
J
= 25 °C
18888
500
400
300
200
100
0
mW
P
tot
2001000°C
T
amb
18117
1000
5
4
3
2
5
4
3
2
100
1
r
zj
0.1
25 25
110
I
Z
T
J
= 25 °C
2.7
5
4
3
2
10
25
100 mA
3.6
4.7
5.1
5.6
Ω
18119
100
5
4
3
2
5
4
3
2
10
r
zj
0.1
25 25
110
I
Z
1
25
100 mA
Ω
T
J
= 25 °C
33
27
22
18
15
12
10
6.8/8.2
6.2
18120
10
3
7
5
4
3
2
7
5
4
3
2
10
Ω
0.1
2345 2345
110
mA
R
zj
I
Z
T
j
= 25 °C
47 + 51
43
39
36
10
2
18121
10
3
5
4
3
2
5
4
3
2
10
2
1
R
zth
5
4
3
2
10
Ω
1
2345 2345
10 100 V
V
Z
at I
Z
= 5 mA
negative
positive
Δ
Δ
V
Z
T
j
R
zth
= R
thA
x V
Z
x
