Data Sheet ADF4106
SPECIFICATIONS
AV
DD
= DV
DD
= 3 V ± 10%, AV
DD
≤ V
P
≤ 5.5 V, AGND = DGND = CPGND = 0 V, R
SET
= 5.1 kΩ, dBm referred to 50 Ω, T
A
= T
MAX
to T
MIN
,
unless otherwise noted.
Table 1.
Parameter B Version
1
B Chips
2
(typ) Unit Test Conditions/Comments
RF CHARACTERISTICS
See Figure 18 for input circuit
RF Input Frequency (RF
IN
) 0.5/6.0 0.5/6.0 GHz min/max
For lower frequencies, ensure
slew rate (SR) > 320 V/µs
RF Input Sensitivity –10/0 –10/0 dBm min/max
Maximum Allowable Prescaler
Output Frequency
3
300 300 MHz max P = 8
325 325 MHz max P = 16
REF
IN
CHARACTERISTICS
REF
IN
Input Frequency
20/300
20/300
For f < 20 MHz, ensure SR > 50 V/µs
REF
IN
Input Sensitivity
4
0.8/V
DD
0.8/V
DD
V p-p min/max Biased at AV
DD
/2 (see Note 5
5
)
REF
IN
Input Capacitance 10 10 pF max
REF
IN
Input Current ±100 ±100 µA max
PHASE DETECTOR
Phase Detector Frequency
6
104 104 MHz max ABP = 0, 0 (2.9 ns antibacklash pulse width)
CHARGE PUMP
Programmable, see Table 9
I
CP
Sink/Source
High Value 5 5 mA typ With R
SET
= 5.1 k
Low Value 625 625 µA typ
Absolute Accuracy 2.5 2.5 % typ With R
SET
= 5.1 kΩ
R
SET
Range 3.0/11 3.0/11 kΩ typ See Table 9
I
CP
Three-State Leakage 2 2 nA max 1 nA typical; T
A
= 25°C
Sink and Source Current Matching 2 2 % typ 0.5 V ≤ V
CP
≤ V
P
− 0.5 V
I
CP
vs. V
CP
1.5 1.5 % typ 0.5 V ≤ V
CP
≤ V
P
− 0.5 V
I
CP
vs. Temperature 2 2 % typ V
CP
= V
P
/2
LOGIC INPUTS
V
IH
, Input High Voltage 1.4 1.4 V min
V
IL
, Input Low Voltage 0.6 0.6 V max
I
INH
, I
INL
, Input Current ±1 ±1 µA max
C
IN
, Input Capacitance 10 10 pF max
LOGIC OUTPUTS
V
OH
, Output High Voltage 1.4 1.4 V min
Open-drain output chosen, 1 kΩ pull-up
resistor to 1.8 V
V
OH
, Output High Voltage V
DD
− 0.4 V
DD
− 0.4 V min CMOS output chosen
I
OH
100 100 µA max
V
OL
, Output Low Voltage 0.4 0.4 V max I
OL
= 500 µA
POWER SUPPLIES
AV
DD
2.7/3.3 2.7/3.3 V min/V max
DV
DD
AV
DD
AV
DD
V
P
AV
DD
/5.5 AV
DD
/5.5 V min/V max AV
DD
≤ V
P
≤ 5.5V
I
DD
7
(AI
DD
+ DI
DD
) 11 9.0 mA max 9.0 mA typ
I
DD
8
(AI
DD
+ DI
DD
) 11.5 9.5 mA max 9.5 mA typ
I
DD
9
(AI
DD
+ DI
DD
)
13
10.5
10.5 mA typ
I
P
0.4 0.4 mA max T
A
= 25°C
Power-Down Mode
10
(AI
DD
+ DI
DD
)
10 10 µA typ
Rev. F | Page 3 of 24
ADF4106 Data Sheet
Parameter B Version
1
B Chips
2
(typ) Unit Test Conditions/Comments
NOISE CHARACTERISTICS
Normalized Phase Noise Floor
(PN
SYNTH
)
11
–223 –223 dBc/Hz typ
PLL loop B/W = 500 kHz, measured at 100 kHz
offset
Normalized 1/f Noise (PN
1_f
)
12
−122 −122 dBc/Hz typ 10 kHz offset; normalized to 1 GHz
Phase Noise Performance
13
@ VCO output
900 MHz
14
–92.5 −92.5 dBc/Hz typ @ 1 kHz offset and 200 kHz PFD frequency
5800 MHz
15
−76.5 −76.5 dBc/Hz typ @ 1 kHz offset and 200 kHz PFD frequency
5800 MHz
16
−83.5 −83.5 dBc/Hz typ @ 1 kHz offset and 1 MHz PFD frequency
Spurious Signals
900 MHz
14
–90/–92 –90/–92 dBc typ @ 200 kHz/400 kHz and 200 kHz PFD frequency
5800 MHz
15
–65/–70
–65/–70
@ 200 kHz/400 kHz and 200 kHz PFD frequency
5800 MHz
16
–70/–75 –70/–75 dBc typ @ 1 MHz/2 MHz and 1 MHz PFD frequency
1
Operating temperature range (B Version) is 40°C to +85°C.
2
The B chip specifications are given as typical values.
3
This is the maximum operating frequency of the CMOS counters. The prescaler value should be chosen to ensure that the RF input is divided down to a frequency that
is less than this value.
4
AV
DD
= DV
DD
= 3 V.
5
AC coupling ensures AV
DD
/2 bias.
6
Guaranteed by design. Sample tested to ensure compliance.
7
T
A
= 25°C; AV
DD
= DV
DD
= 3 V; P = 16; RF
IN
= 900 MHz.
8
T
A
= 25°C; AV
DD
= DV
DD
= 3 V; P = 16; RF
IN
= 2.0 GHz.
9
T
A
= 25°C; AV
DD
= DV
DD
= 3 V; P = 32; RF
IN
= 6.0 GHz.
10
T
A
= 25°C; AV
DD
= DV
DD
= 3.3 V; R = 16383; A = 63; B = 891; P = 32; RF
IN
= 6.0 GHz.
11
The synthesizer phase noise floor is estimated by measuring the in-band phase noise at the output of the VCO and subtracting 20 log N (where N is the N divider
value) and 10 log F
PFD
. PN
SYNTH
= PN
TOT
− 10 log F
PFD
− 20 log N.
12
The PLL phase noise is composed of 1/f (flicker) noise plus the normalized PLL noise floor. The formula for calculating the 1/f noise contribution at an RF frequency, f
RF
,
and at a frequency offset, f, is given by PN = PN
1_f
+ 10 log(10 kHz/f) + 20 log(f
RF
/1 GHz). Both the normalized phase noise floor and flicker noise are modeled in
ADIsimPLL.
13
The phase noise is measured with the EV-ADF4106SD1Z evaluation board and the Agilent E4440A Spectrum Analyzer. The spectrum analyzer provides the REFIN for
the synthesizer (f
REFOUT
= 10 MHz @ 0 dBm).
14
f
REFIN
= 10 MHz; f
PFD
= 200 kHz; Offset Frequency = 1 kHz; f
RF
= 900 MHz; N = 4500; Loop B/W = 20 kHz.
15
f
REFIN
= 10 MHz; f
PFD
= 200 kHz; Offset Frequency = 1 kHz; f
RF
= 5800 MHz; N = 29000; Loop B/W = 20 kHz.
16
f
REFIN
= 10 MHz; f
PFD
= 1 MHz; Offset Frequency = 1 kHz; f
RF
= 5800 MHz; N = 5800; Loop B/W = 100 kHz.
TIMING CHARACTERISITICS
AV
DD
= DV
DD
= 3 V ± 10%, AV
DD
≤ V
P
≤ 5.5 V, AGND = DGND = CPGND = 0 V, R
SET
= 5.1 kΩ, dBm referred to 50 Ω, T
A
= T
MAX
to T
MIN
,
unless otherwise noted.
Table 2.
Parameter Limit
1
(B Version) Unit Test Conditions/Comments
t
1
10 ns min DATA to CLOCK Setup Time
t
2
10 ns min DATA to CLOCK Hold Time
t
3
25 ns min CLOCK High Duration
t
4
25 ns min CLOCK Low Duration
t
5
10 ns min CLOCK to LE Setup Time
t
6
20 ns min LE Pulse Width
1
Operating temperature range (B Version) is 40°C to +85°C.
Rev. F | Page 4 of 24
Data Sheet ADF4106
Rev. F | Page 5 of 24
02720-002
CLOCK
DB22
DB2
DATA
LE
t
1
LE
DB23 (MSB)
t
2
DB1 (CONTROL
BIT C2)
DB0 (LSB)
(CONTROL BIT C1)
t
3
t
4
t
6
t
5
Figure 2. Timing Diagram

ADF4106BRUZ

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Phase Locked Loops - PLL Freq Synthesizer
Lifecycle:
New from this manufacturer.
Delivery:
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