OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

TC2320TG-G

P1-P3P4-P4
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
TC2320
Features
Low threshold
Low on-resistance
Low input capacitance
Fast switching speeds
Freedom from secondary breakdown
Low input and output leakage
Independent, electrically isolated N- and P-channels
Applications
Medical ultrasound transmitters
High voltage pulsers
Amplifiers
Buffers
Piezoelectric transducer drivers
General purpose line drivers
► Logic level interface
►
►
►
►
►
►
►
►
►
►
►
►
►
N- and P-Channel Enhancement-Mode Dual MOSFET
General Description
The Supertex TC2320 consists of a high voltage, low
threshold N- and P-channel MOSFET in an 8-Lead SOIC
package. This low threshold enhancement-mode (normally-
off) transistor utilizes an advanced vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors and
with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway
and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Ordering Information
Device
8-Lead SOIC (Narrow Body)
4.90x3.90mm body,
1.75mm height (max)
1.27mm pitch
BV
DSS
/BV
DGS
(V)
R
DS(ON)
(max)
(Ω)
N-Channel P-Channel N-Channel P-Channel
TC2320 TC2320TG-G 200 -200 7.0 12
-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Parameter Value
Drain-to-source voltage BV
DSS
Drain-to-gate voltage BV
DGS
Gate-to-source voltage ±20V
Operating and storage temperature -55°C to +150°C
Soldering temperature* +300°C
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
Pin Configuration
Product Marking
YY = Year Sealed
WW = Week Sealed
L = Lot Number
= “Green” Packaging
YYWW
C2320
L L L L
8-Lead SOIC (TG)
GP
SP
GN
SN
DP
DP
DN
DN
8-Lead SOIC (TG)
Package may or may not include the following marks: Si or
2
TC2320
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
N-Channel Electrical Characteristics (T
A
= 25°C unless otherwise specified)
Sym Parameter Min Typ Max Units Conditions
BV
DSS
Drain-to-source breakdown voltage 200 - - V V
GS
= 0V, I
D
= 100µA
V
GS(th)
Gate threshold voltage 0.6 - 2.0 V V
GS
= V
DS
, I
D
= 1.0mA
ΔV
GS(th)
Change in V
GS(th)
with temperature - - -4.5 mV/
O
C V
GS
= V
DS
, I
D
= 1.0mA
I
GSS
Gate body leakage - - 100 nA V
GS
= ±20V, V
DS
= 0V
I
DSS
Zero gate voltage drain current
- - 1.0 µA V
GS
= 0V, V
DS
= 100V
- - 10.0 µA
V
GS
= 0V,
V
DS
= Max rating
- - 1.0 mA
V
GS
= 0V, T
A
= 125
O
C
V
DS
= 0.8 Max Rating
I
D(ON)
On-state drain current
0.6 - -
A
V
GS
= 4.5V, V
DS
= 25V
1.2 - - V
GS
= 10V, V
DS
= 25V
R
DS(ON)
Static drain-to-source on-state
resistance
- - 8.0
Ω
V
GS
= 4.5V, I
D
= 150mA
- - 7.0 V
GS
= 10V, I
D
= 1.0A
ΔR
DS(ON)
Change in R
DS(ON)
with temperature - - 1.0 %/
O
C V
GS
= 4.5V, I
D
=150mA
G
FS
Forward transconductance 150 - - mmho V
DS
= 25V, I
D
= 200mA
C
ISS
Input capacitance - - 110
pF
V
GS
= 0V,
V
DS
= 25V,
f = 1.0MHz
C
OSS
Common source output capacitance - - 60
C
RSS
Reverse transfer capacitance - - 23
t
d(ON)
Turn-on delay time - - 20
ns
V
DD
=25V,
I
D
= 150mA,
R
GEN
= 25Ω
t
r
Rise time - - 15
t
d(OFF)
Turn-off delay time - - 25
t
f
Fall time - - 25
V
SD
Diode forward voltage drop - - 1.8 V V
GS
= 0V, I
SD
= 200mA
t
rr
Reverse recovery time - 300 - ns V
GS
= 0V, I
SD
= 200mA
Notes:
All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
All A.C. parameters sample tested.
1.
2.
N-Channel Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
PULSE
GENERATO
R
V
DD
R
L
OUTPUT
D.U.T
.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
GEN
0V
0V
3
TC2320
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
P-Channel Electrical Characteristics (T
A
= 25°C unless otherwise specified)
Sym Parameter Min Typ Max Units Conditions
BV
DSS
Drain-to-source breakdown voltage -200 - - V V
GS
= 0V, I
D
= -2.0mA
V
GS(th)
Gate threshold voltage -1.0 - -2.4 V V
GS
= V
DS
, I
D
= -1.0mA
ΔV
GS(th)
Change in V
GS(th)
with temperature - - 4.5 mV/
O
C V
GS
= V
DS
, I
D
= -1.0mA
I
GSS
Gate body leakage - - -100 nA V
GS
= ±20V, V
DS
= 0V
I
DSS
Zero gate voltage drain current
- - -10 µA V
GS
= 0V, V
DS
= Max rating
- - -1.0 mA
V
GS
= 0V, T
A
= 125
O
C,
V
DS
= 0.8 Max Rating
I
D(ON)
On-state drain current
-0.25 -0.7 -
A
V
GS
= -4.5V, V
DS
= -25V
-0.75 -2.1 - V
GS
= -10V, V
DS
= -25V
R
DS(ON)
Static drain-to-source on-state
resistance
- 10 15
Ω
V
GS
= -4.5V, I
D
= -100mA
- 8.0 12 V
GS
= -10V, I
D
= -200mA
ΔR
DS(ON)
Change in R
DS(ON)
with temperature - - 1.7 %/
O
C V
GS
= -10V, I
D
=-200mA
G
FS
Forward transconductance 100 250 - mmho V
DS
= -25V, I
D
= -200mA
C
ISS
Input capacitance - 75 125
pF
V
GS
= 0V,
V
DS
= -25V,
f = 1.0MHz
C
OSS
Common source output capacitance - 20 85
C
RSS
Reverse transfer capacitance - 10 35
t
d(ON)
Turn-on delay time - - 10
ns
V
DD
= -25V,
I
D
= -0.75A,
R
GEN
= 25Ω
t
r
Rise time - - 15
t
d(OFF)
Turn-on delay time - - 20
t
f
Fall time - - 15
V
SD
Diode forward voltage drop - - -1.8 V V
GS
= 0V, I
SD
= -0.5A
t
rr
Reverse recovery time - 300 - ns V
GS
= 0V, I
SD
= -0.5A
Notes:
All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
All A.C. parameters sample tested.
1.
2.
P-Channel Switching Waveforms and Test Circuit
90%
10%
90%
90%
10%
10%
PULSE
GENERATO
R
V
DD
R
L
Output
D.U.T
.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
GEN
0V
-10V
P1-P3P4-P4

TC2320TG-G

Mfr. #:
Buy TC2320TG-G
Manufacturer:
Microchip Technology
Description:
MOSFET N/P Ch 200 Volt
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet