APTCV60TLM99T3G
APTCV60TLM99T3G – Rev 3 November, 2017
www.microsemi.com
2-10
Q1 & Q4 Absolute maximum ratings (per Super junction MOSFET)
Q1 & Q4 Electrical Characteristics (per Super junction MOSFET)
Symbol Characteristic Test Conditions Min Typ Max Unit
I
DSS
Zero Gate Voltage Drain Current V
GS
= 0V ; V
DS
= 600V 50 µA
R
DS(on)
Drain – Source on Resistance V
GS
= 10V, I
D
= 18A
99 m
V
GS
th
Gate Threshold Voltage V
GS
= V
DS
, I
D
= 1.2 mA 2.5 3 3.5 V
I
GSS
Gate – Source Leakage Current V
GS
= ±20 V, V
DS
= 0V 100 nA
Q1 & Q4 Dynamic Characteristics
(per Super junction MOSFET)
Symbol Characteristic Test Conditions Min Typ Max Unit
C
iss
Input Capacitance
V
GS
= 0V ; V
DS
= 100V
f = 1MHz
2800
pF
C
oss
Output Capacitance 130
Q
g
Total gate Charge
V
GS
= 10V
V
Bus
= 400V
I
D
= 18A
14
nC
Q
gs
Gate – Source Charge 20
Q
gd
Gate – Drain Charge 60
T
d(on)
Turn-on Delay Time
V
GS
= 10V
V
Bus
= 400V
I
D
= 18A
R
G
= 3.3Ω
10
ns
T
r
Rise Time 5
T
d(off)
Turn-off Delay Time 60
T
f
Fall Time 5
R
thJC
Junction to Case Thermal Resistance
1.15
°C/W
Q2 & Q3 Absolute maximum ratings
(per IGBT)
Symbol Parameter Max ratings Unit
V
CES
Collector - Emitter Voltage 600
V
I
C
Continuous Collector Current
T
C
= 25°C
50
A
T
C
= 80°C
30
I
CM
Pulsed Collector Current T
C
= 25°C 60
V
GE
Gate – Emitter Voltage ±20 V
P
D
Power Dissipation
T
C
= 25°C
90 W
RBSOA Reverse Bias Safe Operating Area
T
J
= 150°C
60A @ 550V
Symbol Parameter Max ratings Unit
V
DSS
Drain - Source Voltage 600 V
I
D
Continuous Drain Current
T
c
= 25°C 22
A
T
c
= 80°C 17
I
DM
Pulsed Drain current 75
V
GS
Gate - Source Voltage ±20 V
R
DSon
Drain - Source ON Resistance 99
m
P
D
Power Dissipation T
c
= 25°C 110 W
I
AR
Avalanche current (repetitive and non repetitive) 11 A
E
AR
Repetitive Avalanche Energy 1.2
mJ
E
AS
Single Pulse Avalanche Energy 800
