APTCV60TLM99T3G
APTCV60TLM99T3G – Rev 3 November, 2017
www.microsemi.com
7-10
Q1 & Q4 Typical performance curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
1.2
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
4.5V
6V
6.5V
0
40
80
120
0 5 10 15 20
V
DS
, Drain to Source Voltage (V)
I
D
, Drain Current (A)
Low Voltage Output Characteristics
V
GS
=10, 20V
0
5
10
15
20
25
25 50 75 100 125 150
T
C
, Case Temperature (°C)
I
D
, DC Drain Current (A)
DC Drain Current vs Case Temperature
600
625
650
675
25 50 75 100 125
T
J
, Junction Temperature (°C)
Breakdown Voltage vs Temperature
BV
DSS
, Drain to Source Breakdown
Voltage
Maximum Safe Operating Area
10 ms
100 µs
0.1
1
10
100
1 10 100 1000
V
DS
, Drain to Source Voltage (V)
I
D
, Drain Current (A)
limited b
R
on
Single pulse
T
J
=150°C
T
C
=25°C
Ciss
Crss
Coss
1
10
100
1000
10000
100000
0 25 50 75 100 125 150 175 200
V
DS
, Drain to Source Voltage (V)
C, Capacitance (pF)
Capacitance vs Drain to Source Voltage
0
2
4
6
8
10
0 102030405060
Gate Charge (nC)
V
GS
, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
V
DS
=400V
I
D
=18A
T
J
=25°C
