Nexperia
BC807RA
45 V, 500 mA PNP/PNP general-purpose double transistors
BC807RA All information provided in this document is subject to legal disclaimers.
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Nexperia B.V. 2017. All rights reserved
Product data sheet 16 June 2017 3 / 11
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
CBO
collector-base voltage open emitter - -50 V
V
CEO
collector-emitter voltage open base - -45 V
V
EBO
emitter-base voltage open collector - -5 V
I
C
collector current - -500 mA
I
CM
peak collector current - -1 A
I
BM
peak base current
single pulse; t
p
≤ 1 ms
- -200 mA
P
tot
total power dissipation T
amb
≤ 25 °C [1] - 350 mW
Per device
P
tot
total power dissipation T
amb
≤ 25 °C [1] - 500 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin plated and standard footprint.
T
amb
(°C)
-75 17512525 75-25
aaa-025824
200
400
600
P
tot
(mW)
0
FR4 PCB, standard footprint
Fig. 1. Power derating curve
