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BC807RAZ

P1-P3P4-P6P7-P9P10-P11
Nexperia
BC807RA
45 V, 500 mA PNP/PNP general-purpose double transistors
BC807RA All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 16 June 2017 4 / 11
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
thermal resistance
from junction to
ambient
in free air [1] - - 358 K/W
Per device
R
th(j-a)
thermal resistance
from junction to
ambient
in free air [1] - - 250 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
aaa-025825
10
-5
1010
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.01
0
0.02
0.05
0.10
0.20
0.50
0.75
0.33
FR4 PCB, standard footprint
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Nexperia
BC807RA
45 V, 500 mA PNP/PNP general-purpose double transistors
BC807RA All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 16 June 2017 5 / 11
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
V
CB
= -20 V; I
E
= 0 A; T
amb
= 25 °C - - -100 nAI
CBO
collector-base cut-off
current
V
CB
= -20 V; I
E
= 0 A; T
j
= 150 °C - - -5 µA
I
EBO
emitter-base cut-off
current
V
EB
= -5 V; I
C
= 0 A; T
amb
= 25 °C - - -100 nA
V
CE
= -1 V; I
C
= -100 mA; T
amb
= 25 °C 160 - 400 h
FE
DC current gain
V
CE
= -1 V; I
C
= -500 mA; T
amb
= 25 °C [1] 40 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= -500 mA; I
B
= -50 mA;
T
amb
= 25 °C
[1] - - -700 mV
V
BE
base-emitter voltage V
CE
= -1 V; I
C
= -500 mA; T
amb
= 25 °C [1] - - -1.2 V
C
C
collector capacitance V
CB
= -10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
- 6 - pF
f
T
transition frequency V
CE
= -5 V; I
C
= -10 mA; f = 100 MHz;
T
amb
= 25 °C
80 - - MHz
[1] Pulse test: t
p
≤ 300 µs; δ ≤ 0.02
006aaa120
400
200
600
h
FE
0
I
C
(mA)
- 10
- 1
- 10
3
- 10
2
- 1 - 10
(1)
(2)
(3)
V
CE
= -1 V
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 3. DC current gain as a function of collector
current; typical values
V
CE
(V)
0 -5-4-2 -3-1
aaa-007611
-0.4
-0.8
-1.2
I
C
(A)
0
-11.7
-10.4
I
B
(mA) = -13
-9.1
-7.8
-
6.5
-5.2
-3.9
-2.6
-1.3
T
amb
= 25 °C
Fig. 4. Collector current as a function of collector-
emitter voltage; typical values
Nexperia
BC807RA
45 V, 500 mA PNP/PNP general-purpose double transistors
BC807RA All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet 16 June 2017 6 / 11
aaa-007470
-0.4
-0.8
-1.2
V
BE
(V)
0.0
I
C
(mA)
-10
-1
-10
3
-10
2
-1 -10
(1)
(2)
(3)
V
CE
= -1 V
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 5. Base-emitter voltage as a function of collector
current; typical values
006aaa123
I
C
(mA)
- 10
- 1
- 10
3
- 10
2
- 1 - 10
- 1
- 10
V
BEsat
(V)
- 10
- 1
(1)
(2)
(3)
I
C
/I
B
= 10
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 150 °C
Fig. 6. Base-emitter saturation voltage as a function of
collector current; typical values
006aaa126
- 10
- 1
- 10
- 2
- 1
V
CEsat
(V)
- 10
- 3
I
C
(mA)
- 10
- 1
- 10
3
- 10
2
- 1 - 10
(1)
(2)
(3)
I
C
/I
B
= 10
(1) T
amb
= -55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 7. Collector-emitter saturation voltage as a function of collector current; typical values
11. Test information
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
P1-P3P4-P6P7-P9P10-P11

BC807RAZ

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Nexperia
Description:
Bipolar Transistors - BJT BC807RA/SOT1268 DFN1412-6
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