ZX5T869GTA

1
SEMICONDUCTORS
SUMMARY
BV
CEO
= 25V : R
SAT
= 27m ; I
C
= 7A
DESCRIPTION
Packaged in the SOT223 outline this new 5th generation low saturation 25V
NPN transistor offers extremely low on state losses making it ideal for use in
DC-DC circuits and various driving and power management functions.
FEATURES
Extemely low equivalent on-resistance; R
SAT
= 27m at 6.5A
7 amps continuous current
Up to 20 amps peak current
Very low saturation voltages
Excellent h
FE
characteristics up to 20 amps
APPLICATIONS
DC - DC converters
MOSFET gate drivers
Charging circuits
Power switches
Motor control
DEVICE MARKING
X5T869
ZX5T869G
ISSUE 1 - NOVEMBER 2003
25V NPN LOW SATURATION TRANSISTOR IN SOT223
DEVICE REEL
SIZE
TAPE
WIDTH
QUANTITY PER
REEL
ZX5T869GTA
ZX5T869GTC
7”
13”
12mm
embossed
1000 units
4000 units
ORDERING INFORMATION
PINOUT
TOP VIEW
S
O
T
2
2
3
ZX5T869G
SEMICONDUCTORS
ISSUE 1 - NOVEMBER 2003
2
PARAMETER SYMBOL VALUE UNIT
Junction to ambient
(a)
R
JA
42 °C/W
Junction to ambient
(b)
R
JA
78 °C/W
NOTES
(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
THERMAL RESISTANCE
PARAMETER SYMBOL LIMIT UNIT
Collector-base voltage BV
CBO
60 V
Collector-emitter voltage BV
CEO
25 V
Emitter-base voltage BV
EBO
7.5 V
Continuous collector current I
C
7A
Peak pulse current I
CM
20 A
Power dissipation at T
A
=25°C
(a)
Linear derating factor
P
D
3.0
24
W
mW/°C
Power dissipation at T
A
=25°C
(b)
Linear derating factor
P
D
1.6
12.8
W
mW/°C
Operating and storage temperature range T
j
,T
stg
-55 to +150 °C
ABSOLUTE MAXIMUM RATINGS
ZX5T869G
SEMICONDUCTORS
ISSUE 1 - NOVEMBER 2003
3
CHARACTERISTICS

ZX5T869GTA

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT NPN 25V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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