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ZX5T869GTA

P1-P3P4-P6
ZX5T869G
SEMICONDUCTORS
ISSUE 1 - NOVEMBER 2003
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage BV
CBO
60 105 V I
C
=100␮A
Collector-emitter breakdown voltage BV
CER
60 105 V I
C
=1␮A, RBⱕ1k⍀
Collector-emitter breakdown voltage BV
CEO
25 35 V I
C
=10mA*
Emitter-base breakdown voltage BV
EBO
7.5 8.2 V I
E
=100␮A
Collector cut-off current I
CBO
20
0.5
nA
␮A
V
CB
=50V
V
CB
=50V, T
amb
=100⬚C
Collector cut-off current I
CER
Rⱕ1k⍀
20
0.5
nA
␮A
V
CB
=50V
V
CB
=50V, T
amb
=100⬚C
Emitter cut-off current I
EBO
10 nA V
EB
=6V
Collector-emitter saturation voltage V
CE(SAT)
26
51
98
173
40
65
80
150
220
mV
mV
mV
mV
mV
I
C
=500mA, I
B
=10mA*
I
C
=1A, I
B
=100mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
=10mA*
I
C
=6.5A, I
B
=150mA*
Base-emitter saturation voltage V
BE(SAT)
1010 1080 mV I
C
=6.5A, I
B
=150mA*
Base-emitter turn-on voltage V
BE(ON)
885 980 mV I
C
=6.5A, V
CE
=1V*
Static forward current transfer ratio h
FE
300
300
200
40
400
450
300
90
I
C
=10mA, V
CE
=1V*
I
C
=1A, V
CE
=1V*
I
C
=7A, V
CE
=1V*
I
C
=20A, V
CE
=1V*
Transition frequency f
T
150 I
C
=100mA, V
CE
=10V
f=50MHz
Output capacitance C
OBO
48 pF V
CB
=10V, f=1MHz*
Switching times t
ON
t
OFF
33
464
ns I
C
=1A, V
CC
=10V,
I
B1
=-I
B2
=100mA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
* Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ 2%.
ZX5T869G
SEMICONDUCTORS
ISSUE 1 - NOVEMBER 2003
5
TYPICAL CHARACTERISTICS
ZX5T869G
SEMICONDUCTORS
6
ISSUE 1 - NOVEMBER 2003
Europe
Zetex plc
Fields New Road
Chadderton
Oldham, OL9 8NP
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road
Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
Thispublicationisissuedtoprovideoutlineinformationonlywhich(unlessagreedbytheCompanyinwriting)maynotbeused,appliedorreproduced
for any purpose or form part ofany order or contract or be regarded asa representation relating to the products or servicesconcerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to
www.zetex.com
© Zetex plc 2003
PACKAGE OUTLINE
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PAD LAYOUT DETAILS
DIM
Millimeters Inches
DIM
Millimeters Inches
Min Max Min Max Min Max Min Max
A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC
A1 0.02 0.10 0.0008 0.004 e1 4.60 BSC 0.181 BSC
b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287
b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146
C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 -
D 6.30 6.70 0.248 0.264 - ----
PACKAGE DIMENSIONS
P1-P3P4-P6

ZX5T869GTA

Mfr. #:
Buy ZX5T869GTA
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT NPN 25V
Lifecycle:
New from this manufacturer.
Delivery:
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