IXGH4N250C Datasheet IXGT4N250C, IXGH4N250C | P1-P3

IXGT4N250C

IXGH4N250C

V

CES

= 2500V

I

C110

= 4A

V

CE(sat)

≤≤

≤ 6.0V

High Voltage

IGBTs

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

BV

CES

I

C

= 250μA, V

GE

= 0V 2500 V

V

GE(th)

I

C

= 250μA, V

CE

= V

GE

3.0 5.0 V

I

CES

V

CE

= 0.8 • V

CES

, V

GE

= 0V 25 μA

T

J

= 125°C 1 mA

I

GES

V

CE

= 0V, V

GE

= ± 20V ±100 nA

V

CE(sat)

I

C

= 4A, V

GE

= 15V, Note 1 4.6 6.0 V

T

J

= 125°C 4.5 V

Features

z

Fast Turn off IGBTs

z

International Standard Packages

Advantages

z

High Power Density

z

Low Gate Drive Requirement

Applications

z

Buck Converters

z

Switch-Mode and Resonant-Mode

Power Supplies

z

Uninterruptible Power Supplies

Advance Technical Information

Symbol Test Conditions Maximum Ratings

V

CES

T

C

= 25°C to 150°C 2500 V

V

CGR

T

J

= 25°C to 150°C, R

GE

= 1MΩ 2500 V

V

GES

Continuous ± 20 V

V

GEM

Transient ± 30 V

I

C25

T

C

= 25°C 13 A

I

C110

T

C

= 110°C 4 A

I

CM

T

C

= 25°C, 1ms 46 A

SSOA V

GE

= 15V, T

VJ

= 125°C, R

G

= 20Ω I

CM

= 8 A

(RBSOA) Clamped Inductive Load V

CES

≤ 2000 V

P

C

T

C

= 25°C 150 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6mm (0.062 in.) from Case for 10s 300 °C

T

SOLD

Plastic Body for 10 seconds 260 °C

M

d

Mounting Torque (TO-247) 1.13/10 Nm/lb.in.

Weight TO-268 4 g

TO-247 6 g

G = Gate C = Collector

E = Emitter Tab = Collector

TO-247 (IXGH)

G

C

E

C (Tab)

TO-268 (IXGT)

E

G

C (Tab)

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.

IXGT4N250C

IXGH4N250C

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

Notes:

1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

2. Switching times & energy losses may increase for higher V

CE

(Clamp), T

J

or R

G

.

Additional provisions for lead to lead voltage isolation are required at V

CE

> 1200V.

Symbol Test Conditions

Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fS

I

C

= 4A, V

CE

= 10V, Note 1 4.0 6.0 S

C

ies

1150 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 52 pF

C

res

19 pF

Q

g(on)

57 nC

Q

ge

I

C

= 4A, V

GE

= 15V, V

CE

= 1000V 8 nC

Q

gc

21 nC

t

d(off)

350 ns

t

fi

29 ns

E

(off)

0.36 mJ

t

d(off)

385 ns

t

fi

86 ns

E

(off)

0.80 mJ

R

thJC

0.82 °C/W

R

thCS

TO-247 0.21 °C/W

Inductive Load, T

J

= 25°C

I

C

= 4A, V

GE

= 15V

V

CE

= 0.5 • V

CES

, R

G

= 20Ω

Note 2

Inductive Load, T

J

= 125°C

I

C

= 4A, V

GE

= 15V

V

CE

= 0.5 • V

CES

, R

G

= 20Ω

Note 2

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A

1

2.2 2.54 .087 .102

A

2

2.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b

1

1.65 2.13 .065 .084

b

2

2.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

Terminals: 1 - Gate 2 - Collector

3 - Emitter

∅ P

TO-247 Outline

1 2 3

e

TO-268 Outline

Terminals: 1 - Gate 2,4 - Collector

3 - Emitter

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

1

2

3

4

5

6

7

8

01234567

V

CE

- Volts

I

C

- Amperes

V

GE

= 25V

10V

8V

5V

6V

7V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

10

20

30

40

50

60

0 5 10 15 20 25 30

V

CE

- Volts

I

C

-

Amperes

8V

9V

7V

V

GE

= 15V

13V

11V

10V

6V

Fig. 3. Output Characteristics @ T

J

= 125ºC

0

1

2

3

4

5

6

7

8

01234567

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

10V

8V

7V

5V

6V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 8A

I

C

= 2A

I

C

= 4A

Fig. 5. Collector-to-Emitter Voltage

vs. Gate-to-Emitter Voltage

3

4

5

6

7

8

9

10

5 6 7 8 9 10 11 12 13 14 15

V

GE

- Volts

V

CE

- Volts

V

GE

= 15V

2A

4A

I

C

= 8A

Fig. 6. Input Admittance

0

2

4

6

8

10

12

14

16

3.54.04.55.05.56.06.57.07.5

V

GE

- Volts

I

C

-

Amperes

T

J

= 125ºC

25ºC

- 40ºC

IXGT4N250C

IXGH4N250C

IXGH4N250C

IXGH4N250C

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