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IXGH4N250C

P1-P3P4-P4
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXGT4N250C
IXGH4N250C
Fig. 7. Transconductance
0
2
4
6
8
10
12
14
024681012141618
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 5 10 15 20 25 30 35 40 45 50 55 60
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 1000V
I
C
= 4A
I
G
= 10mA
Fig. 9. Reverse-Bias Safe Operating Area
0
4
8
12
16
20
24
28
250 500 750 1000 1250 1500 1750 2000 2250 2500
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 20Ω
dv / dt < 10V / ns
Fig. 10. Capacitance
1
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
ies
C
oes
C
res
Fig. 11. Maximum Transient Thermal Impedance
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
( t h ) JC
- ºC / W
IXYS REF: G_4N250C(4P) 5-13-11
P1-P3P4-P4

IXGH4N250C

Mfr. #:
Buy IXGH4N250C
Manufacturer:
Description:
IGBT Modules High Voltage IGBTs
Lifecycle:
New from this manufacturer.
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