OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SI8809EDB-T2-E1

P1-P3P4-P6P7-P8
Si8809EDB
www.vishay.com
Vishay Siliconix
S15-0346-Rev. C, 23-Feb-15
1
Document Number: 63301
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P-Channel 20 V (D-S) MOSFET
Marking Code: xx = AE
xxx = Date/Lot traceability code
Ordering Information:
Si8809EDB-T2-E1 (lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET
®
power MOSFET
• Ultra small 0.8 mm x 0.8 mm outline
• Ultra thin 0.357 mm height
• Typical ESD protection 1000 V HBM
• High speed switching
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Portable devices such as cell phones,
smart phones, tablet PCs and media
players
- Load switch
- Battery switch
Notes
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC/JEDEC
®
(J-STD-020), no manual or hand soldering.
d. Maximum under steady state conditions is 185 °C/W.
e. Maximum under steady state conditions is 330 °C/W.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
a
Q
g
(TYP.)
-20
0.090 at V
GS
= -4.5 V -2.6
6 nC0.119 at V
GS
= -2.5 V -2.3
0.155 at V
GS
= -1.8 V -2
MICRO FOOT
®
0.8 x 0.8
Backside View
1
0.8 mm
0.8 mm
xxx
xx
Bump Side View
1
G
4
D
S
3
S
2
1
G
4
S
3
2
S
D
G
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
-20
V
Gate-Source Voltage V
GS
± 8
Continuous Drain Current (T
J
= 150 °C)
T
A
= 25 °C
I
D
-2.6
a
A
T
A
= 70 °C -2.1
a
T
A
= 25 °C -1.9
b
T
A
= 70 °C -1.5
b
Pulsed Drain Current (t = 300 μs) I
DM
-13
Continuous Source-Drain Diode Current
T
A
= 25 °C
I
S
-0.7
a
T
A
= 25 °C -0.4
b
Maximum Power Dissipation
T
A
= 25 °C
P
D
0.9
a
W
T
A
= 70 °C 0.6
a
T
A
= 25 °C 0.5
b
T
A
= 70 °C 0.3
b
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +150
°C
Soldering Recommendations (Peak Temperature)
c
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum Junction-to-Ambient
a, d
t ≤ 5 s R
thJA
105 135
°C/W
Maximum Junction-to-Ambient
b, e
200 260
Si8809EDB
www.vishay.com
Vishay Siliconix
S15-0346-Rev. C, 23-Feb-15
2
Document Number: 63301
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0, I
D
= -250 μA -20 - - V
V
DS
Temperature Coefficient ΔV
DS
/T
J
I
D
= -250 μA
--9-
mV/°C
V
GS(th)
Temperature Coefficient ΔV
GS(th)
/T
J
-2.1-
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= -250 μA -0.4 - -0.9 V
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 4.5 V - - ± 1
μA
V
DS
= 0 V, V
GS
= ± 8 V - - ± 10
Zero Gate Voltage Drain Current I
DSS
V= -20 V, V
GS
= 0 V - - -1
V
DS
= -20 V, V
GS
= 0 V, T
J
= 55 °C - - -10
On-State Drain Current
a
I
D(on)
V ≤ -10 V, V
GS
= -4.5 V -5 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= -4.5 V, I
D
= -1.5 A - 0.075 0.090
ΩV
GS
= -2.5 V, I
D
= -1.5 A - 0.097 0.119
V
GS
= -1.8 V, I
D
= -0.5 A - 0.125 0.155
Forward Transconductance
a
g
fs
V
DS
= -10 V, I
D
= -1.5 A - 8 - S
Dynamic
b
Total Gate Charge Q
g
V
DS
= -10 V, V
GS
= -8 V, I
D
= -1.5 A - 9.8 15
nC
V
DS
= -10 V, V
GS
= -4.5 V, I
D
= -1.5 A
-610
Gate-Source Charge Q
gs
-0.8-
Gate-Drain Charge Q
gd
-1.85-
Gate Resistance R
g
f = 1 MHz - 10 - Ω
Turn-On Delay Time t
d(on)
V
DD
= -10 V, R
L
= 3.7 Ω
I
D
≅ -1.5 A, V
GEN
= -4.5 V, R
g
= 1 Ω
-1530
ns
Rise Time t
r
-2040
Turn-Off Delay Time t
d(off)
-3060
Fall Time t
f
-1020
Turn-On Delay Time t
d(on)
V
DD
= -10 V, R
L
= 3.7 Ω
I
D
≅ -1.5 A, V
GEN
= -8 V, R
g
= 1 Ω
-1020
Rise Time t
r
-1020
Turn-Off Delay Time t
d(off)
-2550
Fall Time t
f
-715
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
T
C
= 25 °C - - -0.7
A
Pulse Diode Forward Current I
SM
---13
Body Diode Voltage V
SD
I
S
= -1.5 A, V
GS
= 0 - -0.8 -1.2 V
Body Diode Reverse Recovery Time t
rr
I
F
= -1.5 A,
di/dt = 100 A/μs, T
J
= 25 °C
-2040ns
Body Diode Reverse Recovery Charge Q
rr
-1020nC
Reverse Recovery Fall Time t
a
-15-
ns
Reverse Recovery Rise Time t
b
-5-
Si8809EDB
www.vishay.com
Vishay Siliconix
S15-0346-Rev. C, 23-Feb-15
3
Document Number: 63301
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate Current vs. Gate-Source Voltage
Output Characteristics
On-Resistance vs. Drain Current
Gate Current vs. Gate-Source Voltage
Transfer Characteristics
Capacitance
0
0.5
1
1.5
2
2.5
3
3.5
4
0 3 6 9 12 15
I
GSS
- Gate Current (mA)
V
GS
- Gate-Source Voltage (V)
T
J
= 25 °C
0
3
6
9
12
15
0.0 0.5 1.0 1.5 2.0 2.5 3.0
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
V
GS
= 1.5 V
V
GS
= 2 V
V
GS
= 2.5 V
V
GS
= 5 V thru 3 V
V
GS
= 1 V
0
0.05
0.10
0.15
0.20
0.25
0.30
0 3 6 9 12 15
R
DS(on)
-On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 1.8 V
V
GS
= 2.5 V
V
GS
= 4.5 V
0 3 6 9 12 15
I
GSS
- Gate Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
10
-9
10
-8
10
-6
10
-7
10
-5
10
-4
10
-3
10
-2
0
1
2
3
4
5
0.0 0.5 1.0 1.5 2.0
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
0
200
400
600
800
0 4 8 12 16 20
C - Capacitance (pF)
V
DS
-Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
P1-P3P4-P6P7-P8

SI8809EDB-T2-E1

Mfr. #:
Buy SI8809EDB-T2-E1
Manufacturer:
Vishay
Description:
MOSFET P-CH 20V 1.9A MICROFOOT
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet