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SI8809EDB-T2-E1

P1-P3P4-P6P7-P8
Si8809EDB
www.vishay.com
Vishay Siliconix
S15-0346-Rev. C, 23-Feb-15
4
Document Number: 63301
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate Charge
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
Threshold Voltage
Single Pulse Power (Junction-to-Ambient)
0
2
4
6
8
0 2 4 6 8 10
V
GS
- Gate-to-Source Voltage (V)
Q
g
-Total Gate Charge (nC)
V
DS
= 16 V
V
DS
= 10 V
V
DS
= 5 V
I
D
= 1.5 A
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
- 50 - 25 0 25 50 75 100 125 150
R
DS(on)
-On-Resistance
(Normalized)
T
J
- Junction Temperature (°C)
V
GS
= 1.8 V, I
D
= 0.5 A
V
GS
= 4.5 V, 2.5 V, I
D
= 1.5 A
0.000
0.050
0.100
0.150
0.200
0.250
0.300
012345
R
DS(on)
-On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
I
D
= 1.5 A; T
J
= 25 °C
I
D
= 0.5 A; T
J
= 25 °C
I
D
= 0.5 A; T
J
= 125 °C
I
D
= 1.5 A; T
J
= 125 C
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
0.3
0.4
0.5
0.6
0.7
0.8
-50-250 255075100125150
V
GS(th)
(V)
T
J
-Temperature (°C)
I
D
= 250 μA
0
2
4
6
8
10
12
14
0.001 0.01 0.1 1 10 100 1000
Power (W)
Time (s)
Si8809EDB
www.vishay.com
Vishay Siliconix
S15-0346-Rev. C, 23-Feb-15
5
Document Number: 63301
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Safe Operating Area, Junction-to-Ambient
Current Derating* Power Derating
Note
When mounted on 1" x 1" FR4 with full copper.
* The power dissipation P
D
is based on T
J (max.)
= 150 °C, using junction-to-ambient thermal resistance, and is more useful in
settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when
this rating falls below the package limit.
0.01
0.1
1
10
100
0.1 1 10 100
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
10 s, 1s
10 ms
100 µs
Limited by R
DS(on)
*
1 ms
T
A
= 25 °C
BVDSS Limited
10 ms
DC
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0 25 50 75 100 125 150
I
D
- Drain Current (A)
T
A
- Ambient Temperature (°C)
0
0.2
0.4
0.6
0.8
25 50 75 100 125 150
Power (W)
T
A
- Ambient Temperature (°C)
Si8809EDB
www.vishay.com
Vishay Siliconix
S15-0346-Rev. C, 23-Feb-15
6
Document Number: 63301
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 Board with Maximum Copper)
Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 Board with Minimum Copper)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63301
.
10
-3
10
-2
1
10
100010
-1
10
-4
100
0.2
0.1
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base=R
thJA
= 185 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
10
-3
10
-2
1
10
100010
-1
10
-4
100
0.2
0.1
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base=R
thJA
= 330 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
Single Pulse
0.02
0.05
P1-P3P4-P6P7-P8

SI8809EDB-T2-E1

Mfr. #:
Buy SI8809EDB-T2-E1
Manufacturer:
Vishay
Description:
MOSFET P-CH 20V 1.9A MICROFOOT
Lifecycle:
New from this manufacturer.
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