June 2009 Doc ID 11491 Rev 3 1/11
11
ST13009
High voltage fast-switching
NPN power transistor
Features
■ Low spread of dynamic parameters
■ High voltage capability
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed
Applications
■ Switch mode power supplies
Description
The device is manufactured using high voltage
multi-epitaxial planar technology for high
switching speeds and high voltage capability. It
uses a hollow emitter structure to enhance
switching speeds.
Figure 1. Internal schematic diagram
TO-220
1
2
3
Table 1. Device summary
Order code
Marking
(1)
Package Packaging
ST13009
13009 L
13009 H
TO-220 Tube
1. Product is pre-selected in DC current gain (group L and group H). STMicroelectronics reserves the right to ship either
groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
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