Electrical characteristics ST13009
4/11 Doc ID 11491 Rev 3
2 Electrical characteristics
(T
case
= 25°C unless otherwise specified)
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
CEV
Collector cut-off current
(V
BE
= -1.5 V)
V
CE
= 700 V
V
CE
= 700 V T
C
= 100°C
10
500
µA
µA
I
EBO
Emitter cut-off current
(I
C
= 0)
V
EB
= 10 V
10 µA
V
CEO(sus)
(1)
1. Pulsed duration = 300 µs, duty cycle 2 %
Collector-emitter
sustaining voltage
(I
B
= 0)
I
C
= 10 mA 400 V
V
CE(sat)
(1)
Collector-emitter
saturation voltage
I
C
= 4 A _ I
B
= 0.8 A
I
C
= 5 A _ _ I
B
= 1 A
I
C
= 8 A _ _ I
B
= 1.6 A
I
C
= 12 A _ _ I
B
= 3 A
0.85
0.9
1.25
2.5
V
V
V
V
V
BE(sat)
(1)
Base-emitter saturation
voltage
I
C
= 5 A _ I
B
= 1 A
I
C
= 8 A _ _ I
B
= 1.6 A
1.2
1.6
V
V
h
FE
(1)(2)
2. Product is pre-selected in DC current gain (group L and group H). STMicroelectronics reserves the right to
ship either groups according to production availability. Please contact your nearest STMicroelectronics
sales office for delivery details.
DC current gain
I
C
= 5 A _ V
CE
= 5 V
Group L
Group H
I
C
= 8 A _ _ V
CE
= 5 V
15
26
10
31
39
30
t
s
t
f
Inductive load
Storage time
Fall time
I
C
= 5 A V
CC
= 250 V
I
B1
= 1 A I
B2
= -2 A
L
= 200 µH
see Figure 9
1.6
60
2.5
110
µs
ns
t
s
t
f
Inductive load
Storage time
Fall time
I
C
= 5 A V
CC
= 125 V
I
B1
= - I
B2
= 1.6 A
L
= 200 µH t
c
= 125 °C
see Figure 9
2.3
110
µs
ns
ST13009 Electrical characteristics
Doc ID 11491 Rev 3 5/11
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Derating curve
Figure 4. DC current gain Figure 5. DC current gain
Figure 6. Collector-emitter saturation
voltage
Figure 7. Base-emitter saturation
voltage
Electrical characteristics ST13009
6/11 Doc ID 11491 Rev 3
Figure 8. Reverse biased operating
area

ST13009

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Bipolar Transistors - BJT HV fast-switching NPN power trans
Lifecycle:
New from this manufacturer.
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