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IRFL210

P1-P3P4-P6P7-P8
IRFL210, SiHFL210
www.vishay.com
Vishay Siliconix
S14-1685-Rev. E, 18-Aug-14
1
Document Number: 91193
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
Marking code: FC
FEATURES
• Surface mount
• Available in tape and reel
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SOT-223 package is designed for surface-mounting
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but
has the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation of
greater than 1.25 W is possible in a typical surface mount
application.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 81 mH, R
G
= 25 , I
AS
= 0.96 A (see fig. 12).
c. I
SD
3.3 A, dI/dt 70 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
PRODUCT SUMMARY
V
DS
(V) 200
R
DS(on)
()V
GS
= 10 V 1.5
Q
g
(Max.) (nC) 8.2
Q
gs
(nC) 1.8
Q
gd
(nC) 4.5
Configuration Single
N-Channel MOSFET
G
D
S
SOT-223
G
D
S
D
Available
ORDERING INFORMATION
Package SOT-223 SOT-223
Lead (Pb)-free and Halogen-free SiHFL210-GE3 SiHFL210TR-GE3
a
Lead (Pb)-free
IRFL210PbF IRFL210TRPbF
a
SiHFL210-E3 SiHFL210T-E3
a
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
200
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current V
GS
at 10 V
T
C
= 25 °C
I
D
0.96
AT
C
= 100 °C 0.6
Pulsed Drain Current
a
I
DM
7.7
Linear Derating Factor 0.025
W/°C
Linear Derating Factor (PCB Mount)
e
0.017
Single Pulse Avalanche Energy
b
E
AS
50 mJ
Repetitive Avalanche Current
a
I
AR
0.96 A
Repetitive Avalanche Energy
a
E
AR
0.31 mJ
Maximum Power Dissipation T
C
= 25 °C
P
D
3.1
W
Maximum Power Dissipation (PCB Mount)
e
T
A
= 25 °C 2.0
Peak Diode Recovery dV/dt
c
dV/dt 5.0 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +150
°C
Soldering Recommendations (Peak Temperature)
d
for 10 s 300
IRFL210, SiHFL210
www.vishay.com
Vishay Siliconix
S14-1685-Rev. E, 18-Aug-14
2
Document Number: 91193
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Maximum Junction-to-Ambient
(PCB Mount)
a
R
thJA
--40
°C/W
Maximum Junction-to-Case (Drain) R
thJC
--60
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 200 - - V
V
DS
Temperature Coefficient V
DS
/T
J
Reference to 25 °C, I
D
= 1 mA - 0.30 - V/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 2.0 - 4.0 V
Gate-Source Leakage I
GSS
V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 200 V, V
GS
= 0 V - - 25
μA
V
DS
= 160 V, V
GS
= 0 V, T
J
= 125 °C - - 250
Drain-Source On-State Resistance R
DS(on)
V
GS
= 10 V I
D
= 0.58 A
b
--1.5
Forward Transconductance g
fs
V
DS
= 50 V, I
D
= 0.58 A 0.51 - - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
- 140 -
pFOutput Capacitance C
oss
-53-
Reverse Transfer Capacitance C
rss
-15-
Total Gate Charge Q
g
V
GS
= 10 V
I
D
= 3.3 A, V
DS
= 160 V,
see fig. 6 and 13
b
--8.2
nC Gate-Source Charge Q
gs
--1.8
Gate-Drain Charge Q
gd
--4.5
Turn-On Delay Time t
d(on)
V
DD
= 100 V, I
D
= 3.3 A,
R
g
= 24 , R
D
= 30 , see fig. 10
b
-8.2-
ns
Rise Time t
r
-17-
Turn-Off Delay Time t
d(off)
-14-
Fall Time t
f
-8.9-
Internal Drain Inductance L
D
Between lead,
6 mm (0.25") from
package and center of
die contact
-4.0-
nH
Internal Source Inductance L
S
-6.0-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
- - 0.96
A
Pulsed Diode Forward Current
a
I
SM
--7.7
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= 0.96 A, V
GS
= 0 V
b
--2.0V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= 3.3 A, dI/dt = 100 A/μs
b
- 150 310 ns
Body Diode Reverse Recovery Charge Q
rr
-0.601.4μC
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
D
S
G
S
D
G
IRFL210, SiHFL210
www.vishay.com
Vishay Siliconix
S14-1685-Rev. E, 18-Aug-14
3
Document Number: 91193
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
91193_01
20 µs Pulse Width
T
C
= 25 °C
4.5 V
10
1
10
0
10
-1
10
0
10
1
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
10
-1
Bottom
To p
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
91193_02
4.5 V
20 µs Pulse Width
T
C
= 150 °C
10
0
10
-1
10
0
10
1
V
DS
,
Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
10
-1
Bottom
To p
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
91193_03
25 °C
150 °C
20 µs Pulse Width
V
DS
= 50 V
10
-1
10
0
I
D
, Drain Current (A)
V
GS
,
Gate-to-Source Voltage (V)
5678910
4
10
-2
91193_04
I
D
= 3.3 A
V
GS
= 10 V
3.0
0.0
0.5
1.0
1.5
2.0
2.5
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
T
J
,
Junction Temperature (°C)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
3.5
91193_05
300
250
200
150
0
100
10
0
10
1
Capacitance (pF)
V
DS
,
Drain-to-Source Voltage (V)
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
iss
C
rss
C
oss
50
91193_06
Q
G
, Total Gate Charge (nC)
V
GS
, Gate-to-Source Voltage (V)
20
16
12
8
0
4
02 864
I
D
= 3.3 A
For test circuit
see figure 13
10
V
DS
= 40 V
V
DS
= 100 V
V
DS
= 160 V
P1-P3P4-P6P7-P8

IRFL210

Mfr. #:
Buy IRFL210
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 844-IRFL210TRPBF
Lifecycle:
New from this manufacturer.
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