IRFL210, SiHFL210
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Vishay Siliconix
S14-1685-Rev. E, 18-Aug-14
4
Document Number: 91193
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Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
91193_07
10
1
10
0
10
-1
25 °C
150 °C
0.4 0.8 1.61.2 2.0
V
GS
= 0 V
V
SD
, Source-to-Drain Voltage (V)
I
SD
, Reverse Drain Current (A)
91193_08
100 µs
1 ms
10 ms
Operation in this area limited
by R
DS(on)
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
I
D
, Drain Current (A)
10
2
2
5
2
5
2
5
V
DS
, Drain-to-Source Voltage (V)
10
10
2
25 2
5
0.1
1
10
1
25
10
3
91193_09
I
D
, Drain Current (A)
T
C
, Case Temperature (°C)
25 1501251007550
0.0
0.4
0.6
0.8
1.0
0.2
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
R
D
V
GS
R
g
D.U.T.
10 V
+
-
V
DS
V
DD
91193_11
Thermal Response (Z
thJC
)
t
1
, Rectangular Pulse Duration (S)
10
-5
10
-4
10
-3
10
-2
0.1 1 10
10
2
10
3
1
0.1
10
-2
10
2
10
0 - 0.5
0.2
0.1
0.05
0.01
Single Pulse
(Thermal Response)
Notes:
1. Duty Factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
0.02
P
DM
t
1
t
2
