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HGT1N30N60A4D

P1-P3P4-P6P7-P9
©2001 Fairchild Semiconductor Corporation HGT1N30N60A4D Rev. B
HGT1N30N60A4D
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGT1N30N60A4D is a MOS gated high voltage
switching device combining the best features of a MOSFETs
and a bipolar transistor. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25
o
C and 150
o
C. This
IGBT is ideal for many high voltage switching applications
operating at high frequencies where low conduction losses
are essential. This device has been optimized for high
frequency switch mode power supplies.
Formerly Developmental Type TA49345.
Features
• 100kHz Operation At 390V, 20A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 58ns at T
J
= 125
o
C
• Low Conduction Loss
Symbol
Packaging
JEDEC STYLE SOT-227B
Ordering Information
PART NUMBER PACKAGE BRAND
HGT1N30N60A4D SOT-227 30N60A4D
NOTE: When ordering, use the entire part number.
C
E
G
GATE
COLLECTOR
EMITTER
EMITTER
TAB
(ISOLATED)
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
Data Sheet December 2001
©2001 Fairchild Semiconductor Corporation HGT1N30N60A4D Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
600 V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
96 A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
39 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
240 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
±
20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GEM
±
30 V
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 150A at 600V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
255 W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 W/
o
C
RMS Isolation Voltage, Any Terminal To Case, t = 1 (Min). . . . . . . . . . . . . . . . . . . . . . . .V
ISOL
2500 V
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Baseplate Screw Torque 4mm Metric Screw Size . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 N-m
Terminal Screw Torque 4mm Metric Screw Size
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.7 N-m
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BV
CES
I
C
= 250
µ
A, V
GE
= 0V 600 - - V
Collector to Emitter Leakage Current I
CES
V
CE
= 600V T
J
= 25
o
C - - 250
µ
A
T
J
= 125
o
C - - 2.8 mA
Collector to Emitter Saturation Voltage V
CE(SAT)
I
C
= 30A,
V
GE
= 15V
T
J
= 25
o
C - 1.8 2.7 V
T
J
= 125
o
C - 1.6 2.0 V
Gate to Emitter Threshold Voltage V
GE(TH)
I
C
= 250
µ
A, V
CE
= 600V 4.5 5.2 7.0 V
Gate to Emitter Leakage Current I
GES
V
GE
=
±
20V - -
±
250 nA
Switching SOA SSOA T
J
= 150
o
C, R
G
= 3
Ω
, V
GE
= 15V,
L = 100
µ
H, V
CE
= 600V
150 - - A
Gate to Emitter Plateau Voltage V
GEP
I
C
= 30A, V
CE
= 300V - 8.5 - V
On-State Gate Charge Q
g(ON)
I
C
= 30A,
V
CE
= 300V
V
GE
= 15V - 225 270 nC
V
GE
= 20V - 300 360 nC
Current Turn-On Delay Time t
d(ON)I
IGBT and Diode at T
J
= 25
o
C,
I
CE
= 30A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 3
Ω,
L = 200
µ
H,
Test Circuit (Figure 24)
-25 - ns
Current Rise Time t
rI
-12 - ns
Current Turn-Off Delay Time t
d(OFF)I
- 150 - ns
Current Fall Time t
fI
-38 - ns
Turn-On Energy (Note 2) E
ON1
- 280 -
µ
J
Turn-On Energy (Note 2) E
ON2
- 600 -
µ
J
Turn-Off Energy (Note 3) E
OFF
- 240 350
µ
J
Current Turn-On Delay Time t
d(ON)I
IGBT and Diode at T
J
= 125
o
C,
I
CE
= 30A,
V
CE
= 390V, V
GE
= 15V,
R
G
= 3
Ω,
L = 200
µ
H,
Test Circuit (Figure 24)
-24 - ns
Current Rise Time t
rI
-11 - ns
Current Turn-Off Delay Time t
d(OFF)I
- 180 200 ns
Current Fall Time t
fI
-5870ns
Turn-On Energy (Note 2) E
ON1
- 280 -
µ
J
Turn-On Energy (Note 2) E
ON2
- 1000 1200
µ
J
Turn-Off Energy (Note 3) E
OFF
- 450 750
µ
J
Diode Forward Voltage V
EC
I
EC
= 30A - 2.2 2.5 V
HGT1N30N60A4D
©2001 Fairchild Semiconductor Corporation HGT1N30N60A4D Rev. B
Diode Reverse Recovery Time t
rr
I
EC
= 30A, dI
EC
/dt = 200A/
µ
s - 40 55 ns
I
EC
= 1A, dI
EC
/dt = 200A/
µ
s - 30 42 ns
Thermal Resistance Junction To Case R
θ
JC
IGBT - - 0.49
o
C/W
Diode - - 2.0
o
C/W
NOTES:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 24.
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
T
C
, CASE TEMPERATURE (
o
C)
I
CE
, DC COLLECTOR CURRENT (A)
50
20
0
50
30
40
25 75 100 125 150
100
70
90
60
V
GE
= 15V
10
80
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
7000
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
300 400200100 500 600
0
100
150
50
200
T
J
=150
o
C, R
G
=3
Ω
,V
GE
= 15V, L = 100
µ
H
f
MAX
, OPERATING FREQUENCY (kHz)
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
300
6010 30
500
100
T
C
V
GE
15V
75
o
C
T
J
= 125
o
C, R
G
=3
Ω
,L=200
µ
H, V
CE
= 390V
f
MAX1
=0.05/(t
d(OFF)I
+t
d(ON)I
)
R
ØJC
=0.49
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
f
MAX2
=(P
D
-P
C
)/(E
ON2
+E
OFF
)
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
t
SC
, SHORT CIRCUIT WITHSTAND TIME (
µ
s)
10 11 12
15
10
16
300
500
900
t
SC
I
SC
800
13 14
4
6
8
12
14
18
200
400
600
700
V
CE
=
390V, R
G
=3
Ω
,T
J
=
125
o
C
HGT1N30N60A4D
P1-P3P4-P6P7-P9

HGT1N30N60A4D

Mfr. #:
Buy HGT1N30N60A4D
Manufacturer:
ON Semiconductor
Description:
IGBT SMPS N-CHAN 600V SOT-227
Lifecycle:
New from this manufacturer.
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