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HGT1N30N60A4D

P1-P3P4-P6P7-P9
©2001 Fairchild Semiconductor Corporation HGT1N30N60A4D Rev. B
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
0 1.0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
10
20
1.5 2.0 2.5
40
30
T
J
= 150
o
C
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V
GE
= 12V
50
T
J
= 25
o
C
0.5
T
J
= 125
o
C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250µs
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= 125
o
C
0
10
20
40
30
50
0 1.0 1.5 2.0 2.50.5
E
ON2
, TURN-ON ENERGY LOSS (µJ)
1000
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
500
1500
0
3500
10 20 30 40 50 60
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 3Ω, L = 200µH, V
CE
= 390V
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
0
2500
2000
3000
1000
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
OFF
, TURN-OFF ENERGY LOSS (µJ)
0
600
200
800
1200
1400
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
400
R
G
= 3Ω, L = 200µH, V
CE
= 390V
10 20 30 40 50 600
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(ON)I
, TURN-ON DELAY TIME (ns)
20
22
24
26
28
34
10 20 30 40 50 600
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 12V
R
G
= 3Ω, L = 200µH, V
CE
= 390V
32
30
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
, RISE TIME (ns)
0
40
20
100
80
60
R
G
= 3Ω, L = 200µH, V
CE
= 390V
T
J
= 125
o
C, V
GE
= 15V, V
GE
= 12V
2010 30 40 50 600
T
J
= 25
o
C, V
GE
= 12V
T
J
= 25
o
C, V
GE
= 15V
HGT1N30N60A4D
©2001 Fairchild Semiconductor Corporation HGT1N30N60A4D Rev. B
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
Typical Performance Curves Unless Otherwise Specified (Continued)
160
120
140
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
220
200
180
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
V
GE
= 12V, V
GE
= 15V, T
J
= 125
o
C
R
G
= 3Ω, L = 200µH,
V
CE
= 390V
2010 30 40 50 600
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
, FALL TIME (ns)
20
30
40
R
G
= 3Ω, L = 200µH, V
CE
= 390V
T
J
= 25
o
C, V
GE
= 12V OR 15V
50
70
2010 30 40 50 600
T
J
= 125
o
C, V
GE
= 12V OR 15V
60
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
50
100
7 8 9 10 12
V
GE
, GATE TO EMITTER VOLTAGE (V)
11
150
300
350
6
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V
CE
= 10V
T
J
= 125
o
C
T
J
= -55
o
C
250
200
T
J
= 25
o
C
V
GE
, GATE TO EMITTER VOLTAGE (V)
Q
G
, GATE CHARGE (nC)
2.5
12.5
0
7.5
I
G(REF)
= 1mA, R
L
= 15Ω, T
J
= 25
o
C
V
CE
= 200V
5.0
10.0
15.0
V
CE
= 600V
50 100 150 200 250
0
V
CE
= 400V
I
CE
= 15A
0
2
50 75 100
T
C
, CASE TEMPERATURE (
o
C)
3
12525 150
5
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (mJ)
R
G
= 3Ω, L = 200µH, V
CE
= 390V, V
GE
= 15V
4
I
CE
= 60A
I
CE
= 30A
1
E
TOTAL
= E
ON2
+ E
OFF
0
10 100
R
G
, GATE RESISTANCE (Ω)
16
3 300
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (mJ)
20
T
J
= 125
o
C, L = 200µH, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
I
CE
= 15A
I
CE
= 30A
I
CE
= 60A
12
8
4
HGT1N30N60A4D
©2001 Fairchild Semiconductor Corporation HGT1N30N60A4D Rev. B
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF
CURRENT
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF
CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C, CAPACITANCE (nF)
C
RES
0 5 10 15 20 25
0
2
6
8
10
4
FREQUENCY = 1MHz
C
OES
C
IES
V
GE
, GATE TO EMITTER VOLTAGE (V)
9
1.7
12
1.8
2.0
1.9
11 13 14 15 16
2.1
2.3
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
= 60A
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250µs, T
J
= 25
o
C
I
CE
= 30A
I
CE
= 15A
2.2
10
0.5 1.0 1.5 2.5
I
EC
, FORWARD CURRENT (A)
V
EC
, FORWARD VOLTAGE (V)
0 2.0
0
10
15
20
25
25
o
C
125
o
C
5
35
30
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%,
60
40
20
0
t
rr
, RECOVERY TIMES (ns)
I
EC
, FORWARD CURRENT (A)
03020
70
50
30
10
10 15 25
80
100
25
o
C t
rr
25
o
C t
a
25
o
C t
b
125
o
C t
b
125
o
C t
a
dI
EC
/dt = 200A/µs
125
o
C t
rr
5
90
300 400 500 700 800
t
rr
, RECOVERY TIMES (ns)
dI
EC
/dt, RATE OF CHANGE OF CURRENT (A/µs)
200 600
10
0
20
30
40
50
60
900 1000
125
o
C t
a
125
o
C t
b
25
o
C t
a
25
o
C t
b
I
EC
= 30A, V
CE
= 390V
800
400
0
Q
rr
, REVERSE RECOVERY CHARGE (nC)
di
EC
/dt, RATE OF CHANGE OF CURRENT (A/µs)
1000
1200
1000
600
200
200 400
1400
600 800
V
CE
= 390V
125
o
C, I
F
= 20A
125
o
C, I
F
= 40A
25
o
C, I
F
= 40A
25
o
C, I
F
= 20A
HGT1N30N60A4D
P1-P3P4-P6P7-P9

HGT1N30N60A4D

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Buy HGT1N30N60A4D
Manufacturer:
ON Semiconductor
Description:
IGBT SMPS N-CHAN 600V SOT-227
Lifecycle:
New from this manufacturer.
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