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NTD5867NLT4G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 3
1 Publication Order Number:
NTD5867NL/D
NTD5867NL
N-Channel Power MOSFET
60 V, 20 A, 39 mW
Features
• Low R
DS(on)
• High Current Capability
• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
60 V
Gate−to−Source Voltage − Continuous V
GS
±20 V
Gate−to−Source Voltage
− Non−Repetitive (t
p
< 10 ms)
V
GS
±30 V
Continuous Drain
Current (R
q
JC
)
Steady
State
T
C
= 25°C
I
D
20
A
T
C
= 100°C 13
Power Dissipation
(R
q
JC
)
T
C
= 25°C P
D
36 W
Pulsed Drain Current
t
p
= 10 ms
I
DM
76 A
Operating Junction and Storage Temperature T
J
, T
stg
−55 to
150
°C
Source Current (Body Diode) I
S
20 A
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 50 V, V
GS
= 10 V, R
G
= 25 W,
I
L(pk)
= 19 A, L = 0.1 mH, T
J
= 25°C)
E
AS
18 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain)
R
q
JC
3.5
°C/W
Junction−to−Ambient − Steady State (Note 1)
R
q
JA
45
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces.
DPAK
CASE 369AA
(Surface Mount)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
60 V
39 mW @ 10 V
R
DS(on)
MAX I
D
MAXV
(BR)DSS
50 mW @ 4.5 V
http://onsemi.com
1
2
3
4
See detailed ordering and shipping information on page 5 o
f
this data sheet.
ORDERING INFORMATION
1
Gate
2
Drain
3
Source
4
Drain
AYWW
58
67NLG
A = Assembly Location*
Y = Year
WW = Work Week
5867NL = Device Code
G = Pb−Free Package
G
S
N−Channel
D
IPAK
CASE 369D
(Straight Lead)
STYLE 2
1
2
3
4
4
Drain
2
Drain
1
Gate
3
Source
AYWW
58
67NLG
20 A
18 A
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
NTD5867NL
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
60 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
60 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 60 V
T
J
= 25°C 1.0
mA
T
J
= 125°C 100
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±20 V ±100 nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.5 1.8 2.5 V
Negative Threshold Temperature Coefficient V
GS(TH)
/T
J
5.2 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V, I
D
= 10 A 26 39
mW
V
GS
= 4.5 V, I
D
= 10 A 33 50
Forward Transconductance g
FS
V
DS
= 15 V, I
D
= 10 A 8.0 S
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
C
iss
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 25 V
675
pF
Output Capacitance C
oss
68
Reverse Transfer Capacitance C
rss
47
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 48 V,
I
D
= 20 A
15
nC
Threshold Gate Charge Q
G(TH)
1.0
Gate−to−Source Charge Q
GS
2.2
Gate−to−Drain Charge Q
GD
4.3
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 48 V,
I
D
= 20 A
7.6 nC
Gate Resistance R
G
1.3
W
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
t
d(on)
V
GS
= 10 V, V
DD
= 48 V,
I
D
= 20 A, R
G
= 2.5 W
6.5
ns
Rise Time t
r
12.6
Turn−Off Delay Time t
d(off)
18.2
Fall Time t
f
2.4
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 10 A
T
J
= 25°C 0.87 1.2
V
T
J
= 100°C 0.78
Reverse Recovery Time t
RR
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
S
= 20 A
17
ns
Charge Time ta 13
Discharge Time tb 4.0
Reverse Recovery Charge Q
RR
12 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
NTD5867NL
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES
10V
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−to−Source Leakage Current
vs. Drain Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
V
DS
≥ 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
V
GS
= 4.5 V
I
D
= 20 A
V
GS
= 10 V
T
J
= 25°C
3.8 V
3.0 V
4 V
3.6 V
2.8 V
3.2 V
3.4 V
I
D
= 20 A
T
J
= 25°C
V
GS
= 10 V
T
J
= 25°C
0
10
20
30
40
35
5
0123 2345
0.020
0.030
0.040
0.050
0.060
46810
0.020
0.035
10 15 205
0.030
0.025
0.040
0.6
0.8
1.0
1.2
1.4
−50 0 50 100 150
1.6
1.8
−25 25 75 125
3579
4.5 V
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
100
1000
10 20 30 40 60
10
10000
25
15
45
0
10
20
30
40
35
5
25
15
2.0
2.2
50
P1-P3P4-P6P7-P7

NTD5867NLT4G

Mfr. #:
Buy NTD5867NLT4G
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET DPAK 60V 18A 43 MOHM
Lifecycle:
New from this manufacturer.
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