NTD5867NL
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4
TYPICAL PERFORMANCE CURVES
C
rss
02030
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
Figure 7. Capacitance Variation
10
V
GS
= 0 V
T
J
= 25°C
C
oss
C
iss
V
GS
Figure 8. Gate−To−Source Voltage vs.
Total Charge
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Q
G
, TOTAL GATE CHARGE (nC)
V
DS
= 48 V
I
D
= 20 A
T
J
= 25°C
Q
gd
Q
gs
Q
T
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
I
S
, SOURCE CURRENT (AMPS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
R
G
, GATE RESISTANCE (OHMS)
t, TIME (ns)
V
GS
= 0 V
Figure 10. Diode Forward Voltage vs. Current
t
r
t
d(off)
t
d(on)
t
f
V
DD
= 48 V
I
D
= 20 A
V
GS
= 10 V
T
J
= 25°C
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
V
GS
= 10 V
SINGLE PULSE
T
C
= 25°C
1 ms
100 ms
10 ms
dc
10 ms
40
T
J
, JUNCTION TEMPERATURE (°C)
I
D
= 20 A
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
0
100
200
300
400
0
0
2
4
6
8
51015
1 10 100
10
100
1000
0.70.5
0
10
20
5
15
0.8 0.9
10 100
1
10
100
0.1
1 25 125
20
10
0
75 100 15050
1.0
15
5
700
800
600
500
10
1
0.6
900
1000
50 60
