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STW29NK50ZD
2/10
Table 3: Absolute Maximum ratings
(*) Pulse width limited by safe operating area
(1) I
SD
≤ 29 A, di/dt≤ 200 A/µs, VDD≤ 400V
Table 4: Thermal Data
Table 5: Avalanche Characteristics
Table 6: Gate-Source Zener Diode
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (V
GS
= 0)
500 V
V
DGR
Drain-gate Voltage (R
GS
= 20 KΩ)
500 V
V
GS
Gate- source Voltage ± 30 V
I
D
Drain Current (continuous) at T
C
= 25°C 29
A
I
D
Drain Current (continuous) at T
C
= 100°C
18.27 A
I
DM
(*)
Drain Current (pulsed) 116 A
P
TOT
Total Dissipation at T
C
= 25°C
350 W
Derating Factor 2.77 W/°C
V
ESD(G-S)
Gate source ESD (HBM-C = 100pF, R = 1.5 KΩ) 6000 V
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
T
stg
T
j
Storage Temperature
Operating Junction Temperature
-55 to 150 °C
Rthj-case Thermal Resistance Junction-case Max 0.36 °C/W
Rthj-amb
T
l
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
50
300
°C/W
°C
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
29 A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
500 mJ
Symbol Parameter Test Condition Min. Typ. Max Unit
BV
GSO
Gate-Source Breakdown
Voltage
Igs= ± 1mA (Open Drain)
30 A
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