IXFN21N100Q Datasheet IXFN21N100Q | P1-P3

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C 1000 V

V

DGR

T

J

= 25°C to 150°C; R

GS

= 1 MΩ 1000 V

V

GS

Continuous ±20 V

V

GSM

Transient ±30 V

I

D25

T

C

= 25°C 21 A

I

DM

T

C

= 25°C, pulse width limited by T

JM

84 A

I

AR

T

C

= 25°C21A

E

AR

T

C

= 25°C 60mJ

E

AS

2.5 J

dv/dt I

S

≤ I

DM

, di/dt ≤ 100 A/µs, V

DD

≤ V

DSS

, 10 V/ns

T

J

≤ 150°C, R

G

= 2 Ω

P

D

T

C

= 25°C 520 W

T

J

-55 to +150 °C

T

JM

150 °C

T

stg

-55 to +150 °C

V

ISOL

50/60 Hz, RMS t = 1 min 2500 V~

I

ISOL

≤ 1 mA t = 1 s 3000 V~

M

d

Mounting torque 1.5/13 Nm/lb.in.

Terminal connection torque 1.5/13 Nm/lb.in.

Weight 30 g

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

V

DSS

V

GS

= 0 V, I

D

= 1 mA 1000 V

V

GS(th)

V

DS

= V

GS

, I

D

= 4 mA 3 5.0 V

I

GSS

V

GS

= ±20 V

DC

, V

DS

= 0 ±100 nA

I

DSS

V

DS

= V

DSS

100 µA

V

GS

= 0 V T

J

= 125°C2mA

R

DS(on)

V

GS

= 10 V, I

D

= 0.5 I

D25

0.50 Ω

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

HiPerFET

TM

Power MOSFETs

Q-Class

Single MOSFET Die

N-Channel Enhancement Mode

Avalanche Rated, Low Q

g

,

High dv/dt

V

DSS

= 1000 V

I

D25

= 21 A

R

DS(on)

= 0.50

ΩΩ

Ω

t

rr

≤ ≤

≤ 250 ns

IXFN 21N100Q

S

G

S

D

miniBLOC, SOT-227 B (IXFN)

E153432

Features

•IXYS advanced low Q

g

process

•Low gate charge and capacitances

- easier to drive

-faster switching

•Unclamped Inductive Switching (UIS)

rated

•Low R

DS (on)

•Fast intrinsic diode

•International standard package

•miniBLOC with Aluminium nitride

isolation for low thermal resistance

•Low terminal inductance (<10 nH) and

stray capacitance to heatsink (<35pf)

•Molding epoxies meet UL 94 V-0

flammability classification

Applications

•DC-DC converters

•Battery chargers

•Switched-mode and resonant-mode

power supplies

•DC choppers

•Temperature and lighting controls

Advantages

•Easy to mount

•Space savings

•High power density

G = Gate D = Drain

S = Source

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

DS98762B(01/03

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified)

min. typ. max.

g

fs

V

DS

= 20 V; I

D

= 0.5 • I

D25

, pulse test 16 22 S

C

iss

5900 pF

C

oss

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz 550 pF

C

rss

90 pF

t

d(on)

21 ns

t

r

V

GS

= 10 V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

18 ns

18

t

d(off)

R

G

= 1 Ω (External) 60 ns

t

f

12 ns

Q

G(on)

170 nC

Q

GS

V

GS

= 10 V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

38 nC

Q

GD

75 nC

R

thJC

0.24 K/W

R

thCK

0.05 K/W

Source-Drain Diode Characteristic Values

(T

J

= 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

I

S

V

GS

= 0 V 21 A

I

SM

Repetitive; pulse width limited by T

JM

84 A

V

SD

I

F

= I

S

, V

GS

= 0 V, 1.5 V

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

t

rr

250 ns

Q

RM

I

F

= I

S

, -di/dt = 100 A/µs, V

R

= 100 V 1.4 µC

I

RM

8A

miniBLOC, SOT-227 B

M4 screws (4x) supplied

Dim. Millimeter Inches

Min. Max. Min. Max.

A 31.50 31.88 1.240 1.255

B 7.80 8.20 0.307 0.323

C 4.09 4.29 0.161 0.169

D 4.09 4.29 0.161 0.169

E 4.09 4.29 0.161 0.169

F 14.91 15.11 0.587 0.595

G 30.12 30.30 1.186 1.193

H 38.00 38.23 1.496 1.505

J 11.68 12.22 0.460 0.481

K 8.92 9.60 0.351 0.378

L 0.76 0.84 0.030 0.033

M 12.60 12.85 0.496 0.506

N 25.15 25.42 0.990 1.001

O 1.98 2.13 0.078 0.084

P 4.95 5.97 0.195 0.235

Q 26.54 26.90 1.045 1.059

R 3.94 4.42 0.155 0.174

S 4.72 4.85 0.186 0.191

T 24.59 25.07 0.968 0.987

U -0.05 0.1 -0.002 0.004

IXFN 21N100Q

V

GS

- Volts

3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5

I

D

- Amperes

0

4

8

12

16

20

24

T

C

- Degrees C

-50 -25 0 25 50 75 100 125 150

I

D

- Amperes

0

5

10

15

20

25

T

J

- Degrees C

25 50 75 100 125 150

R

DS(ON)

- Normalized

1.0

1.4

1.8

2.2

2.6

I

D

- Amperes

0 102030

R

DS(ON)

- Normalized

0.8

1.2

1.6

2.0

2.4

2.8

V

DS

- Volts

0 5 10 15 20 25 30 35

I

D

- Amperes

0

5

10

15

20

25

30

T

J

= 125

O

C

4V

5V

V

GS

= 9V

8V

7V

6V

5V

T

J

= 25

o

C

V

GS

= 10V

T

J

= 25

O

C

V

DS

- Volts

0 5 10 15 20

I

D

- Amperes

0

10

20

30

40

V

GS

= 9V

8V

7V

6V

T

J

= 25

O

C

I

D

=21A

I

D

=10.5A

V

GS

= 10V

T

J

= 125

O

C

T

J

= 125

o

C

IXFN 21N100Q

Fig.2 Output Characteristics @ T

j

= 125°C

Fig.4 Temperature Dependence of Drain

to Source Resistance

Fig.6 Drain Current vs Gate Source Voltage

Fig.1 Output Characteristics @ T

j

= 25°C

Fig.3 R

DS(on)

vs. Drain Current

Fig.5 Drain Current vs. Case Temperature

IXFN21N100Q

IXFN21N100Q

Products related to this Datasheet