IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
V
SD
- Volts
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
I
D
- Amperes
0
15
30
45
60
75
90
Pulse Width - Seconds
10
-4
10
-3
10
-2
10
-1
10
0
R(th)
JC
- K/W
0.001
0.010
0.100
1.000
V
DS
- Volts
0 5 10 15 20 25 30 35 40
Capacitance - pF
100
1000
10000
Gate Charge - nC
0 40 80 120 160 200
V
GS
- Volts
0
2
4
6
8
10
Crss
Coss
V
DS
= 500 V
I
D
= 21 A
I
G
= 10 mA
f = 100kHz
T
J
= 125
O
C
T
J
= 25
O
C
Ciss
30000
60
IXFN 21N100Q
Fig.7 Gate Charge Characteristic Curve Fig.8 Capacitance Curves
Fig.9 Drain Current vs Drain to Source Voltage
Fig.10 Transient Thermal Impedance
