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NTMFD4C85NT3G

P1-P3P4-P6P7-P9P10-P12P13-P13
NTMFD4C85N
www.onsemi.com
10
TYPICAL CHARACTERISTICS − Q2
Figure 21. On−Region Characteristics Figure 22. Diode Forward Voltage vs. Current
R
G
, GATE RESISTANCE (W)
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
100101
1
10
100
1000
0.80.70.60.50.40.3
0
1
2
3
5
6
7
10
t, TIME (ns)
I
S
, SOURCE CURRENT (A)
9
Figure 23. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 24. Drain−to−Source Leakage Current
vs. Voltage
Q
G
, TOTAL GATE CHARGE (nC) V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
453525201050
0
4
8
12
302520151050
1.0E+00
Figure 25. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1001010.1
0.1
1
100
1000
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
DSS
, LEAKAGE (nA)
I
D
, DRAIN CURRENT (A)
2
6
10
1.0E+01
1.0E+02
1.0E+03
1.0E+04
1.0E+06
10
Q
T
V
GS
= 10 V
V
DS
= 15 V
I
D
= 20 A
T
J
= 25°C
T
J
= 150°C
V
GS
= 0 V
T
J
= 125°C
T
J
= 85°C
V
GS
≤ 10 V
Single Pulse
T
C
= 25°C
10 ms
V
GS
= 10 V
V
DS
= 15 V
I
D
= 20 A
t
f
t
r
t
d(on)
t
d(off)
T
J
= 25°C
4
8
RDS(on) Limit
Thermal Limit
Package Limit
100 ms
1 ms
10 ms
dc
15 30 40
1.0E+05
Q
GS
Q
GD
NTMFD4C85N
www.onsemi.com
11
TYPICAL CHARACTERISTICS − Q2
Figure 26. Thermal Characteristics
PULSE TIME (sec)
0.010.001 10.0001 0.10.00001 100.000001
0.001
0.1
1
10
100
R(t) (°C/W)
100 1000
50% Duty Cycle
Single Pulse
20%
10%
5%
2%
1%
0.01
PCB Cu Area 650 mm
2
PCB Cu thk 1 oz
Ordering Information
Device Package Shipping
†
NTMFD4C85NT1G DFN8
(Pb−Free)
1500 / Tape & Reel
NTMFD4C85NT3G DFN8
(Pb−Free)
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NTMFD4C85N
www.onsemi.com
12
PACKAGE DIMENSIONS
DFN8 5x6, 1.27P PowerPhase FET
CASE 506CR
ISSUE C
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.27
0.65
0.75
5.50
6X
PITCH
2.67
DIMENSION: MILLIMETERS
6.50
5X
2.31
4.05
0.76
5X
4.10
1.22
1.66
0.98
2.07
0.71
0.54
0.62
0.23
RECOMMENDED
h −−− 12
_
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS b AND b1 APPLY TO PLATED TERMINAL AND ARE
MEASURED BETWEEN 0.15 AND 0.25 MM FROM THE TIPS.
4. COPLANARITY APPLIES TO THE EXPOSED PADS AS WELL AS THE
TERMINALS.
5. DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
6. SEATING PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED
AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST
POINT ON THE PACKAGE BODY.
1234
56
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1
h
D
E
B
A
0.20
C
0.20 C
2X
2X
DIM MIN
MILLIMETERS
A 0.90
A1 0.00
b 0.40
c 0.20
D 5.15 BSC
D1 4.90
D2 3.70
E 6.15 BSC
E1 5.80
E2 2.37
G1 1.615 BSC
L 0.34
A
0.10 C
0.10 C
1
e/2
L
DETAIL A
A1
c
4X
MAX
1.10
0.05
0.60
0.30
5.10
3.90
6.00
2.57
0.59
78
PIN ONE
IDENTIFIER
NOTE 4
C
SEATING
PLANE
DETAIL A
NOTE 6
b2 0.40 0.60
e
D3 2.96 3.16
E3 1.05 1.25
e 1.27 BSC
G 0.625 BSC
b
8X
A
M
0.10 BC
M
0.05 C
NOTE 3
5X
E4 1.36 1.56
L2 1.68 1.93
BOTTOM VIEW
1
D2
E2
A
M
0.10 BC
A
M
0.10 BC
D3
G
G1
E3
b2
6X
L2
E4
SUPPLEMENTAL
P1-P3P4-P6P7-P9P10-P12P13-P13

NTMFD4C85NT3G

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Manufacturer:
ON Semiconductor
Description:
MOSFET NFET SO8FL
Lifecycle:
New from this manufacturer.
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