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NTMFD4C85NT3G

P1-P3P4-P6P7-P9P10-P12P13-P13
NTMFD4C85N
www.onsemi.com
4
Table 3. ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter UnitsMaxTypMinTest ConditionFETSymbol
CHARGES & GATE RESISTANCE
Total Gate Charge
Q
G(TOT)
Q1
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 20 A
15
nC
Q2 45.2
Threshold Gate Charge Q
G(TH)
Q1 1.5
Q2 4.5
Gate−to−Source Charge Q
GS
Q1 5.0
Q2 15
Gate−to−Drain Charge Q
GD
Q1 5.2
Q2 11.8
Total Gate Charge Q
G(TOT)
Q1
V
GS
= 10 V, V
DS
= 15 V; I
D
= 20 A
32
nC
Q2 99.3
Gate Resistance R
G
Q1
T
A
= 25°C
1.0 W
Q2 1.0
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
t
d(ON)
Q1
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 20 A, R
G
= 3.0 W
10.3
ns
Q2 19.5
Rise Time t
r
Q1 37
Q2 27
Turn−Off Delay Time t
d(OFF)
Q1 20
Q2 47
Fall Time t
f
Q1 5.6
Q2 15
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
t
d(ON)
Q1
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 20 A, R
G
= 3.0 W
8.0
ns
Q2 12.6
Rise Time t
r
Q1 31.5
Q2 22.7
Turn−Off Delay Time t
d(OFF)
Q1 25
Q2 60
Fall Time t
f
Q1 4.0
Q2 12.2
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Voltage
V
SD
Q1
V
GS
= 0 V,
I
S
= 10 A
T
J
= 25°C
0.78
V
T
J
= 125°C
0.62
Q2
V
GS
= 0 V,
I
S
= 10 A
T
J
= 25°C
0.75
T
J
= 125°C
0.55
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
6. Switching characteristics are independent of operating junction temperatures
NTMFD4C85N
www.onsemi.com
5
Table 3. ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter UnitsMaxTypMinTest ConditionFETSymbol
DRAIN−SOURCE DIODE CHARACTERISTICS
Reverse Recovery Time
t
RR
Q1
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 2 A
40
ns
Q2 73
Charge Time ta
Q1 20
Q2 40
Discharge Time tb
Q1 20
Q2 33
Reverse Recovery Charge Q
RR
Q1 37
nC
Q2 137
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
6. Switching characteristics are independent of operating junction temperatures
NTMFD4C85N
www.onsemi.com
6
TYPICAL CHARACTERISTICS − Q1
Figure 3. On−Region Characteristics Figure 4. Transfer Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) V
GS
, GATE−TO−SOURCE VOLTAGE (V)
543210
0
20
40
60
80
100
140
160
4.03.02.5 4.51.51.00.50
0
20
40
60
80
100
120
160
Figure 5. On−Resistance vs. Gate−to−Source
Voltage
Figure 6. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
, GATE VOLTAGE (V) I
D
, DRAIN CURRENT (A)
98765432
2
3
4
5
6
8
9
10
80706050402010
0
1
2
4
5
6
Figure 7. On−Resistance Variation with
Temperature
Figure 8. Capacitance Variation
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1251007550250−25−50
0.2
0.4
0.8
1.0
1.2
1.6
1.8
302520151050
0
500
1000
1500
2000
2500
3000
I
DS
, DRAIN CURRENT (A)
I
DS
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (mW)
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (mW)
R
DS(on)
(Normalized to 25°C)
C, CAPACITANCE (pF)
120
2.0 3.5
140
10
7
3
30
150
0.6
1.4
T
J
= 25°C
V
GS
= 3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
2.6 V
2.4 V
3.8 V
4.0 V − 10 V
V
DS
= 3 V
25°C
125°C
−55°C
T
J
= 25°C
I
D
= 20 A
V
GS
= 4.5 V
T
J
= 25°C
V
GS
= 10 V
V
GS
= 10 V
I
D
= 20 A
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
C
ISS
C
OSS
C
RSS
3500
4000
1
P1-P3P4-P6P7-P9P10-P12P13-P13

NTMFD4C85NT3G

Mfr. #:
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Manufacturer:
ON Semiconductor
Description:
MOSFET NFET SO8FL
Lifecycle:
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