C-118
Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge (turn-on) — 59 80 I
C
= 27A
Q
ge
Gate - Emitter Charge (turn-on) — 8.6 10 nC V
CC
= 400V
Q
gc
Gate - Collector Charge (turn-on) — 25 42 See Fig. 8
t
d(on)
Turn-On Delay Time — 71 — T
J
= 25°C
t
r
Rise Time — 76 — ns I
C
= 27A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time — 320 480 V
GE
= 15V, R
G
= 10Ω
t
f
Fall Time — 210 320 Energy losses include "tail" and
E
on
Turn-On Switching Loss — 1.3 — diode reverse recovery.
E
off
Turn-Off Switching Loss — 3.2 — mJ See Fig. 9, 10, 11, 18
E
ts
Total Switching Loss — 4.5 6.8
t
d(on)
Turn-On Delay Time — 70 — T
J
= 150°C, See Fig. 9, 10, 11, 18
t
r
Rise Time — 73 — ns I
C
= 27A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time — 540 — V
GE
= 15V, R
G
= 10Ω
t
f
Fall Time — 480 — Energy losses include "tail" and
E
ts
Total Switching Loss — 7.8 — mJ diode reverse recovery.
L
E
Internal Emitter Inductance — 13 — nH Measured 5mm from package
C
ies
Input Capacitance — 1500 — V
GE
= 0V
C
oes
Output Capacitance — 190 — pF V
CC
= 30V See Fig. 7
C
res
Reverse Transfer Capacitance — 20 — ƒ = 1.0MHz
t
rr
Diode Reverse Recovery Time — 42 60 ns T
J
= 25°C See Fig.
— 74 120 T
J
= 125°C 14 I
F
= 15A
I
rr
Diode Peak Reverse Recovery Current — 4.0 6.0 A T
J
= 25°C See Fig.
— 6.5 10 T
J
= 125°C 15 V
R
= 200V
Q
rr
Diode Reverse Recovery Charge — 80 180 nC T
J
= 25°C See Fig.
— 220 600 T
J
= 125°C 16 di/dt = 200A/µs
di
(rec)M
/dt Diode Peak Rate of Fall of Recovery — 188 — A/µs T
J
= 25°C See Fig.
During t
b
— 160 — T
J
= 125°C 17
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600 — — V V
GE
= 0V, I
C
= 250µA
∆V
(BR)CES
/∆T
J
Temp. Coeff. of Breakdown Voltage — 0.70 — V/°C V
GE
= 0V, I
C
= 1.0mA
V
CE(on)
Collector-to-Emitter Saturation Voltage — 1.7 2.0 I
C
= 27A V
GE
= 15V
— 2.2 — V I
C
= 49A See Fig. 2, 5
— 1.9 — I
C
= 27A, T
J
= 150°C
V
GE(th)
Gate Threshold Voltage 3.0 — 5.5 V
CE
= V
GE
, I
C
= 250µA
∆V
GE(th)
/∆T
J
Temp. Coeff. of Threshold Voltage — -12 — mV/°C V
CE
= V
GE
, I
C
= 250µA
g
fe
Forward Transconductance 9.2 12 — S V
CE
= 100V, I
C
= 27A
I
CES
Zero Gate Voltage Collector Current — — 250 µA V
GE
= 0V, V
CE
= 600V
— — 3500 V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
V
FM
Diode Forward Voltage Drop — 1.3 1.7 V I
C
= 15A See Fig. 13
— 1.2 1.6 I
C
= 15A, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA V
GE
= ±20V
IRGPC40FD2
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
V
CC
=80%(V
CES
), V
GE
=20V, L=10µH,
R
G
= 10Ω, ( See fig. 19 )
Pulse width 5.0µs,
single shot.
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Repetitive rating; V
GE
=20V, pulse width
limited by max. junction temperature.
( See fig. 20 )
Notes:
