IRGPC40FD2

C-120
Fig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature
Fig. 4 - Maximum Collector Current vs.
Case Temperature
IRGPC40FD2
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
0
10
20
30
40
50
25 50 75 100 125 150
Maximum DC Collector Current (A)
T
,
C
ase
T
empera
t
ure (
°C
)
C
V = 15 V
G E
1.0
1.5
2.0
2.5
3.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
,
C
ase
T
empera
t
ure (
°C
)
C
CE
V , Collector-to-Emitter Voltage (V)
V = 15 V
80µs P UL SE WIDTH
G E
I = 54 A
I = 27A
I = 14A
C
C
C
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Rectangular Pulse Duration (sec)
1
thJC
D = 0.50
0.01
0.02
0.05
0.10
0.20
SING LE PUL SE
(THERMA L RESP ONSE)
Thermal Response (Z )
P
t
2
1
t
DM
N otes:
1 . D uty factor D = t / t
2. Pea k T = P x Z + T
1 2
J
D M
thJC
C
C-121
IRGPC40FD2
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Case Temperature
4.5
4.6
4.7
4.8
4.9
0 10 20 30 40 50 60
G
Total Switching Losses (mJ)
R , Gate Resistance (
)
A
V = 480V
V = 15V
T = 25°C
I = 27A
CC
GE
C
C
1
10
100
-60 -40 -20 0 20 40 60 80 100 120 140 160
C
T , Case Temperature (°C)
Total Switching Losses (mJ)
R = 10
V = 15V
V = 480V
G
GE
CC
A
I = 54A
I = 27A
I = 14A
C
C
C
0
50 0
10 00
15 00
20 00
25 00
30 00
1 10 100
C E
C, Capacitance (pF)
V
,
C
o
ll
ec
t
or-
t
o-
E
m
itt
er
V
o
lt
age (
V
)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GE
ies ge gc ce
res gc
oes ce gc
C
ies
C
res
C
oes
0
4
8
12
16
20
0 10 20 30 40 50 60
G E
V , Gate-to-Emitter Voltage (V)
Q
,
T
ota
l
G
ate
Ch
arge (n
C
)
g
V = 400V
I = 27 A
CE
C
C-122
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
IRGPC40FD2
0.0
4.0
8.0
12.0
16.0
20.0
0 20 40 60
C
Total Switching Losses (mJ)
R = 10
T = 150°C
V = 480V
V = 15V
G
C
CC
GE
I , Collector-to-Emitter Current (A)
A
1
10
100
1000
1 10 100 1000
C
C E
GE
V
,
Collector-to-Em itter
Volta
g
e
(
V
)
I , Collector-to-Emitter Current (A)
SAFE O PE RA TING ARE A
V = 20V
T = 125°C
G E
J
1
10
100
0.8 1.2 1.6 2.0 2.4
FM
F
Instantaneous Forward Current - I (A)
Forward Voltage Drop - V (V)
T = 150°C
T = 125°C
T = 25°C
J
J
J

IRGPC40FD2

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
IGBT W/DIODE 600V 49A TO-247AC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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