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BAT48JFILM

P1-P3P4-P6P7-P8
July 2011 Doc ID 12634 Rev 2 1/8
8
BAT48
Small signal Schottky diode
Features
■ Low leakage current losses
■ Negligible switching losses
■ Low forward and reverse recovery times
■ Extremely fast switching
■ Surface mount device
■ Low capacitance diode
Description
The BAT48 series uses 40 V Schottky barrier
diodes packaged in SOD-123, SOD-323 or
DO-35. This series is general purpose and
features very low turn-on voltage and fast
switching.
Table 1. Device summary
Symbol Value
I
F
350 mA
V
RRM
40 V
C (typ) 18 pF
T
j
(max) 150 °C
SOD-123
SOD-323
BAT48ZFILM
(Single)
BAT48JFILM
(Single)
BAT48RL
Configurations in top view
Band indicates cathode
K
A
www.st.com
Characteristics BAT48
2/8 Doc ID 12634 Rev 2
1 Characteristics
Table 2. Absolute ratings (limiting values at T
j
= 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 40 V
I
F
Continuous forward current 350 mA
I
FSM
Surge non repetitive forward
current
t
p
= 10 ms
sinusoidal
SOD-123, SOD-323 2
A
DO-35 7.5
T
stg
Storage temperature range -65 to +150 °C
T
j
Maximum operating junction temperature
range
SOD-123, SOD-323 -40 to +150
°C
DO-35 -40 to +125
T
L
Maximum temperature for soldering during
10 s
SOD-123, SOD-323 260
°C
DO-35 at 4 mm from
case
230
Table 3. Thermal parameters
Symbol Parameter Value Unit
R
th(j-a)
Junction to ambient
(1)
1. Epoxy printed circuit board with recommended pad layout
SOD-123 500
°C/W
SOD-323 550
R
th(j-l)
Junction to lead
(2)
2. On infinite heatsink with 4 mm lead length
DO-35 300 °C/W
BAT48 Characteristics
Doc ID 12634 Rev 2 3/8
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
BR
Breakdown reverse voltage T
j
= 25 °C I
r
= 25 µA 40 V
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= 1.5 V 1
µA
V
R
= 10 V 2
V
R
= 20 V 5
V
R
= 40 V 25
T
j
= 60 °C
V
R
= 1.5 V 10
V
R
= 10 V 15
V
R
= 20 V 25
V
R
= 40 V 50
V
F
(2)
Forward voltage drop T
j
= 25 °C
I
F
= 0.1 mA 0.25
V
I
F
= 1 mA 0.3
I
F
= 10 mA 0.4
I
F
= 50 mA 0.5
I
F
= 200 mA 0.75
I
F
= 500 mA 0.9
1. Pulse test: t
p
= 5 ms, δ < 2 %
2. Pulse test: t
p
= 380 µs, δ < 2 %
Table 5. Dynamic characteristics
Symbol Parameter
Test conditions
Min. Typ. Max. Unit
C Diode capacitance
V
R
= 0 V, F = 1 MHz 30
pF
V
R
= 1 V, F = 1 MHz 18
Figure 1. Average forward power dissipation
versus average forward current
Figure 2. Average forward current versus
ambient temperature (δ = 1)
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40
P(W)
T
δ
=tp/T
tp
δ = 1
δ = 0.05
I (A)
F(AV)
δ = 0.1
δ = 0.2
δ = 0.5
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0 25 50 75 100 125 150
I (A)
F(AV)
T (°C)
amb
T
δ
=tp/T
tp
P1-P3P4-P6P7-P8

BAT48JFILM

Mfr. #:
Buy BAT48JFILM
Manufacturer:
STMicroelectronics
Description:
Schottky Diodes & Rectifiers schottky diode
Lifecycle:
New from this manufacturer.
Delivery:
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