IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA220N06T3 IXFP220N06T3
IXFH220N06T3
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= 10V, I
D
= 60A, Note 1 87 145 S
C
iss
8500 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 970 pF
C
rss
50 pF
R
Gi
Gate Input Resistance 1.7
t
d(on)
24 ns
t
r
20 ns
t
d(off)
46 ns
t
f
17 ns
Q
g(on)
136 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
44 nC
Q
gd
30 nC
R
thJC
0.34C/W
R
thCS
TO-220 0.50 C/W
TO-247 0.21 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V 220 A
I
SM
Repetitive, Pulse Width Limited by T
JM
880 A
V
SD
I
F
= 100A, V
GS
= 0V, Note 1 1.4 V
t
rr
38 ns
I
RM
1.9
A
Q
RM
37 nC
Notes: 1. Pulse test, t 300s, duty cycle, d 2%.
2. On through-hole packages, R
DS(on)
Kelvin test contact location must be 5mm
or less from the package body.
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 5 (External)
I
F
= 110A, V
GS
= 0V
-di/dt = 100A/s
V
R
= 40V
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
