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IXFA220N06T3

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA220N06T3 IXFP220N06T3
IXFH220N06T3
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
180
200
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
V
GS
- Volts
I
D
- Amperes
T
J
= 150ºC
V
DS
= 10V
25ºC
- 40ºC
Fig. 8. Transconductance
0
50
100
150
200
250
300
0 40 80 120 160 200 240
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
150ºC
V
DS
= 10V
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
50
100
150
200
250
300
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 30V
I
D
= 110A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Forward-Bias Safe Operating Area
0.1
1
10
100
1000
1 10 100
V
DS
- Volts
I
D
- Amperes
100µs
1ms
10ms
R
DS(on)
Limit
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
DC
External Lead
Current Limit
© 2016 IXYS CORPORATION, All Rights Reserved
IXFA220N06T3 IXFP220N06T3
IXFH220N06T3
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
10
12
14
16
18
20
22
24
26
28
110 120 130 140 150 160 170 180 190 200 210 220
I
D
- Amperes
t
r
- Nanoseconds
T
J
= 25ºC
T
J
= 150ºC
R
G
= 5 , V
GS
= 10V
V
DS
= 30V
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
0
50
100
150
200
250
300
350
5 101520253035404550
R
G
- Ohms
t
r
- Nanoseconds
0
30
60
90
120
150
180
210
t
d(on)
- Nanoseconds
t
r
t
d(on)
T
J
= 150ºC, V
GS
= 10V
V
DS
= 30V
I
D
= 220A, 110A
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
0
5
10
15
20
25
30
35
40
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f
- Nanoseconds
30
40
50
60
70
80
90
100
110
t
d(off)
- Nanoseconds
t
f
t
d(off)
R
G
= 5, V
GS
= 10V
V
DS
= 30V
I
D
= 220A
I
D
= 110A
I
D
= 220A
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
10
14
18
22
26
30
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 5 , V
GS
= 10V
V
DS
= 30V
I
D
= 220A
I
D
= 110A
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
10
12
14
16
18
20
22
24
26
110 120 130 140 150 160 170 180 190 200 210 220
I
D
- Amperes
t
f
- Nanoseconds
20
30
40
50
60
70
80
90
100
t
d(off)
- Nanoseconds
t
f
t
d(off)
R
G
= 5, V
GS
= 10V
V
DS
= 30V
T
J
= 25ºC
T
J
= 150ºC
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
0
100
200
300
400
500
600
5 101520253035404550
R
G
- Ohms
t
f
- Nanoseconds
0
100
200
300
400
500
600
t
d(off)
- Nanoseconds
t
f
t
d(off)
T
J
= 150ºC, V
GS
= 10V
V
DS
= 30V
I
D
= 110A
I
D
= 220A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA220N06T3 IXFP220N06T3
IXFH220N06T3
IXYS REF: F_220N06T3(U5-M05) 5-27-16
Pins: 1 - Gate 2 - Drain
3 - Source
TO-220 Outline
TO-263 Outline
1 = Gate
2 = Drain
3 = Source
4 = Drain
TO-247 Outline
R
L1
A2
Q
E
A
D
c
B
A
b
C
L
D
S
D2
E1
A2 A2 A2
e
0P1
ixys option
A1
b4
b2
D1
0P
O 0K M D B M
+
O J M C A M
+
1
2 3
4
+
+
PINS: 1 - Gate
2, 4 - Drain
3 - Source
Fig. 19. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
P1-P3P4-P6

IXFA220N06T3

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Description:
60V/220A TRENCHT3 HIPERFET MOSFE
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