IRF/B/S/SL3207PbF
2 www.irf.com
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Package limitation current is 75A.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.33mH
R
G
= 25Ω, I
AS
= 75A, V
GS
=10V. Part not recommended for use
above this value.
I
SD
≤ 75A, di/dt ≤ 500A/µs, V
DD
≤ V
(BR)DSS
, T
J
≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended
footprint and soldering techniques refer to application note #AN-994.
R
θ
is measured at T
J
approximately 90°C.
Static @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
(BR)DSS
Drain-to-Source Breakdown Voltage 75 ––– ––– V
∆
(BR)DSS
∆
J
Breakdown Voltage Temp. Coefficient ––– 0.069 ––– V/°C
DS(on)
Static Drain-to-Source On-Resistance ––– 3.6 4.5
mΩ
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V
DSS
Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
GSS
Gate-to-Source Forward Leakage ––– ––– 200 nA
Gate-to-Source Reverse Leakage ––– ––– -200
G
Gate Input Resistance ––– 1.2 –––
Ω
f = 1MHz, open drain
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
gfs Forward Transconductance 150 ––– ––– S
g
Total Gate Charge ––– 180 260 nC
gs
Gate-to-Source Charge ––– 48 –––
gd
Gate-to-Drain ("Miller") Charge ––– 68 –––
d(on)
Turn-On Delay Time ––– 29 ––– ns
r
Rise Time ––– 120 –––
d(off)
Turn-Off Delay Time ––– 68 –––
f
Fall Time ––– 74 –––
iss
Input Capacitance ––– 7600 ––– pF
oss
Output Capacitance ––– 710 –––
rss
Reverse Transfer Capacitance ––– 390 –––
oss
Effective Output Capacitance (Energy Related)
––– 920 –––
oss
Effective Output Capacitance (Time Related)
––– 1010 –––
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units
S
Continuous Source Current ––– –––
170
A
(Body Diode)
SM
Pulsed Source Current ––– ––– 720
(Body Diode)
SD
Diode Forward Voltage ––– ––– 1.3 V
rr
Reverse Recovery Time ––– 42 63 ns
J
R
––– 49 74
J
F
rr
Reverse Recovery Charge ––– 65 98 nC
J
––– 92 140
J
RRM
Reverse Recovery Current ––– 2.6 ––– A
J
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
D
= 75A
R
G
= 2.6
Ω
V
GS
= 10V
V
DD
= 48V
T
J
= 25°C, I
S
= 75A, V
GS
= 0V
integral reverse
p-n junction diode.
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 75A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 75V, V
GS
= 0V
V
DS
= 75V, V
GS
= 0V, T
J
= 125°C
MOSFET symbol
showing the
V
DS
= 60V
Conditions
V
GS
= 10V
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 60V , See Fig.1
V
GS
= 0V, V
DS
= 0V to 60V , See Fig. 5
Conditions
V
DS
= 50V, I
D
= 75A
I
D
= 75A
V
GS
= 20V
V
GS
= -20V