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IRFS3207TRLPBF
P1-P3
P4-P6
P7-P9
P10-P12
IRF/B/S/SL3207PbF
www.irf.com
7
Fig 23a.
Switching Time Test Circuit
Fig 23b.
Switching Time Waveforms
V
GS
V
DS
9
0%
10%
t
d(
on)
t
d(off)
t
r
t
f
V
GS
Puls
e Width <
1µs
Duty Fac
tor < 0.1%
V
DD
V
DS
L
D
D.U.T
+
-
Fig 22b.
Unclamped Inductive Waveforms
Fig 22a.
Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.
U.T
L
V
DS
+
-
V
DD
DRI
VE
R
A
15V
20V
V
GS
Fig 24a.
Gate Charge Test Circuit
Fig 24b.
Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 21.
Peak Diode
Recovery
dv/dt Test
Circuit
for N-Channel
HEXFET
®
Power MOSFETs
1K
VC
C
DUT
0
L
Circuit
Layout
Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤
5%
Body Diode
Forward Drop
R
e-Applied
V
oltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T
. I
SD
Waveform
D.U.T
. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
*
V
GS
=
5V for Logic
Level Devices
*
+
-
+
+
+
-
-
-
R
G
V
DD
•
dv/dt controlled by
R
G
•
Driver same type as
D.U.T.
•
I
SD
controlled
by Duty Factor
"D"
•
D.U.T. - Device
Under Test
D.U.T
Inductor
Current
IRF/B/S/SL3207PbF
8
www.irf.com
TO-220AB packages are not recommended for Surface Mount Application.
T
O-220AB
Part
Marking
Information
T
O-220AB
Package
Outline
Dimensions
are shown
in
millimeters
(inches)
IRF/B/S/SL3207PbF
www.irf.com
9
T
O-262 Part Marking Information
T
O-262 Package Outline
Dimensions are shown in millimeters (inches)
P1-P3
P4-P6
P7-P9
P10-P12
IRFS3207TRLPBF
Mfr. #:
Buy IRFS3207TRLPBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT 75V 180A 4.5mOhm 180nC
Lifecycle:
New from this manufacturer.
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