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IRF9Z30PBF

P1-P3P4-P6P7-P8
IRF9Z30, SiHF9Z30
www.vishay.com
Vishay Siliconix
S12-3048-Rev. A, 24-Dec-12
1
Document Number: 91459
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
FEATURES
• P-Channel Versatility
• Compact Plastic Package
• Fast Switching
• Low Drive Current
• Ease of Paralleling
• Excellent Temperature Stability
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note
* Lead (Pb)-containing terminations are not RoHS-compliant.
Exemptions may apply.
DESCRIPTION
The power MOSFET technology is the key to Vishay’s
advanced line of power MOSFET transistors. The efficient
geometry and unique processing of the power MOSFET
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The p-channel power MOSFET’s are designed for
application which require the convenience of reverse
polarity operation. They retain all of the features of the more
common n-channel Power MOSFET’s such as voltage
control, very fast switching, ease of paralleling, and
excellent temperature stability.
P-channel power MOSFETs are intended for use in power
stages where complementary symmetry with n-channel
devices offers circuit simplification. They are also very useful
in drive stages because of the circuit versatility offered by
the reverse polarity connection. Applications include motor
control, audio amplifiers, switched mode converters, control
circuits and pulse amplifiers.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. V
DD
= - 25 V, starting T
J
= 25 °C, L =100 μH, R
g
= 25
c. 0.063" (1.6 mm) from case.
PRODUCT SUMMARY
V
DS
(V) - 50
R
DS(on)
()V
GS
= - 10 V 0.14
Q
g
(Max.) (nC) 39
Q
gs
(nC) 10
Q
gd
(nC) 15
Configuration Single
S
G
D
P-Channel MOSFET
TO-220AB
G
D
S
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free
IRF9Z30PbF
SiHF9Z30-E3
SnPb
IRF9Z30
SiHF9Z30
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
- 50
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current V
GS
at - 10 V
T
C
= 25 °C
I
D
- 18
AT
C
= 100 °C - 11
Pulsed Drain Current
a
I
DM
- 60
Linear Derating Factor 0.59 W/°C
Inductive Current, Clamped L = 100 μH I
LM
- 60 A
Unclamped Inductive Current (Avalanche Current) I
L
- 3.1 A
Maximum Power Dissipation T
C
= 25 °C P
D
74 W
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature) for 10 s 300
c
IRF9Z30, SiHF9Z30
www.vishay.com
Vishay Siliconix
S12-3048-Rev. A, 24-Dec-12
2
Document Number: 91459
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. Pulse width 300 μs; duty cycle 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
-80
°C/W
Maximum Junction-to-Case (Drain) R
thJC
-1.7
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= - 250 μA - 50 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= - 250 μA - 2.0 -
- 4.0 V
Gate-Source Leakage I
GSS
V
GS
= ± 20 V - - ± 500
nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= max. rating, V
GS
= 0 V - - - 250
μA
V
DS
= max. rating x 0.8, V
GS
= 0 V,
T
J
=125 °C
- - - 1000
Drain-Source On-State Resistance R
DS(on)
V
GS
= - 10 V I
D
= - 9.3 A
b
- 0.093 0.14
Forward Transconductance g
fs
V
DS
= 2 x V
GS
, I
DS
= - 9 A
b
3.1 4.7 -
S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= - 25 V,
f = 1.0 MHz, see fig. 9
- 900 -
pFOutput Capacitance C
oss
- 570 -
Reverse Transfer Capacitance C
rss
- 140 -
Total Gate Charge Q
g
V
GS
= - 10 V
I
D
= - 18 A, V
DS
= - 0.8
max. rating. see fig. 17
-2639
nC Gate-Source Charge Q
gs
-6.910
Gate-Drain Charge Q
gd
-9.715
Turn-On Delay Time t
d(on)
V
DD
= - 25 V, I
D
= - 18 A,
R
g
= 13 , R
D
= 1.3, see fig. 16
(MOSFET switching times are
essentially independent of operating
temperature)
-1218
ns
Rise Time t
r
- 110 170
Turn-Off Delay Time t
d(off)
-2132
Fall Time t
f
-6496
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--- 18
A
Pulsed Diode Forward Current
a
I
SM
--- 60
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= - 18 A, V
GS
= 0 V
b
--- 6.3
V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= - 18 A, dI/dt = 100 A/μs
b
54 120 250
ns
Body Diode Reverse Recovery Charge Q
rr
0.20 0.47 1.1
μC
S
D
G
IRF9Z30, SiHF9Z30
www.vishay.com
Vishay Siliconix
S12-3048-Rev. A, 24-Dec-12
3
Document Number: 91459
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Transfer Characteristics
Fig. 3 - Typical Saturation Characteristics
Fig. 4 - Maximum Safe Operating Area
0 5 10 15 20 25
- 8 V
80 μs Pulse Test
- 7 V
V
GS
= - 5 V
25
20
15
10
5
0
- 4 V
- 5 V
- 10 V
- V
DS
, Drain-to-Source Voltage (V)
- I
D
, Drain Current (A)
10
2
10
1
0
- V
GS
,
Gate-to-Source Voltage (V)
- I
D
, Drain Current (A)
0.1
5
2
5
2
5
2
246
8
10
80 µs Pulse Test
V
DS
= 2 x V
GS
T
J
= 25 °C
T
J
= 150 °C
- V
DS
,
Drain-to-Source Voltage (V)
- I
D
, Drain Current (A)
- 10 V
- 8 V
- 7 V
V
GS
= - 5 V
- 5 V
- 4 V
80 μs Pulse Test
0
1
2
3
4
5
25
20
15
10
5
0
- V
DS
, Drain-to-Source Voltage (V)
- I
D
, Drain Current (A)
Operation in this Area Limited
by R
DS(on)
SiHF9Z30
SiHF9Z32
SiHF9Z30
SiHF9Z32
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
10 μs
100 μs
1 μs
10 μs
DC
1
2
510
2
5
10
2
1
5
2
10
2
5
10
2
2
5
10
3
P1-P3P4-P6P7-P8

IRF9Z30PBF

Mfr. #:
Buy IRF9Z30PBF
Manufacturer:
Vishay / Siliconix
Description:
MOSFET P-CH -60V HEXFET MOSFET
Lifecycle:
New from this manufacturer.
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